DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA (DPAK) Anode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ① IFRM TVJ = TVJM TC = 152°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 20 8 12 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 60 A EAS TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH 0.5 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A -40...+175 175 -40...+150 °C °C °C TVJ TVJM Tstg Ptot TC = 25°C 60 W Weight typ. 0.3 g Features • • • • • Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Applications • Anti saturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages Symbol Conditions Characteristic Values typ. max. IR VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 150°C 60 0.25 µA mA VF IF = 8 A; 1.13 1.69 V V 2.5 K/W TVJ = 150°C TVJ = 25°C RthJC trr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C 30 2 ns 2.4 • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses • Operating at lower temperature or space saving by reduced cooling Dimensions see Outlines.pdf A ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 432 Data according to IEC 60747 1-2 DSEP 8-03AS 30 400 15 TVJ = 100°C TVJ = 100°C nC VR = 150V A IF TVJ =150°C IRM 300 TVJ =100°C 20 VR = 150V A Qr IF = 20A IF = 10A IF = 5A 10 TVJ = 25°C IF = 20A IF = 10A IF = 5A 200 10 5 100 0 0.0 0.5 1.0 1.5 2.0 V 0 100 0 A/µs 1000 -diF/dt VF Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 70 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 16 0.8 TVJ = 100°C TVJ = 100°C V VR = 150V ns trr 60 1.2 1.0 12 VFR IF = 20A IF = 10A IF = 5A Kf 50 IF = 10A tfr µs 0.6 VFR tfr 8 0.4 4 0.2 IRM Qr 0.8 40 0.6 30 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.005 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-03A 0.0001 0.001 0.01 s 0.1 1 t IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved 432 Fig. 7 Transient thermal resistance junction to case 2-2