Fast Recovery Epitaxial Diode (FRED) DSEI 36 VRSM A VRRM V V 600 600 Type C VRRM = 600 V IFAVM = 37 A trr = 35 ns TO-263 AA NC A DSEI 36-06AS C (TAB) A = Anode, C = Cathode, NC = No connection, TAB = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 70 37 375 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 320 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 260 280 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 420 A2s A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 340 320 A2s A2s -40...+150 150 -40...+150 °C °C °C 125 W 2 g Features International standard surface mount package JEDEC TO-263 AA Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 ● ● ● ● ● ● TVJ TVJM Tstg Ptot TC = 25°C Weight Symbol Test Conditions typ. TO-263 AA Outline Characteristic Values max. IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 100 50 7 mA mA mA VF IF = 37 A; TVJ = 150°C TVJ = 25°C 1.4 1.6 V V VT0 rT For power-loss calculations only TVJ = TVJM 1.01 7.1 V mW 1.0 K/W Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC Characteristic curves are located in the data sheet DSEI 30-06A. L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 ① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions R 0.46 0.74 .018 .029 RthJC trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms L £ 0.05 mH; TVJ = 100°C 10 11 A © 2000 IXYS All rights reserved 008 I2t ● 1-1