Common Cathode Fast Recovery Epitaxial Diode (FRED) VRSM V 1200 VRRM DSEK 30 IFAVM = 2 x 26 A VRRM = 1200 V trr = 40 ns TO-247 AD Type V 1200 A DSEK 30-12A C A C (TAB) Symbol Test Conditions IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by T VJM 50 26 375 A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 210 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 185 195 A A TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 180 A2 s A2 s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 170 160 A2 s A2 s -40...+150 150 -40...+150 °C °C °C 125 W ∫ i2dt TVJ TVJM Tstg Ptot TC = 25°C Md Mounting torque with screw M3 Mounting torque with screw M3.5 6 Test Conditions typ. TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM VF I F = 37 A; TVJ = 150°C TVJ = 25°C VT0 rT For power-loss calculations only TVJ = TVJM IR C Nm/lb.in. Nm/lb.in. Features l l l l l l g Characteristic Values max. 750 250 7 µA µA mA 2.2 2.55 V V 1.65 18.2 V mΩ 0.9 0.5 70 K/W K/W K/W l l I F = 1 A; -di/dt = 100 A/µs; VR = 30 V; T VJ = 25°C 40 60 ns IRM VR = 540 V; I F = 30 A; -diF/dt = 240 A/µs L ≤ 0.05 µH; TVJ = 100°C 16 18 A ¬ IFAVM rating includes reverse blocking losses at TVJM , VR = 0.8 VRRM, duty cycle d = 0.5 Data according to DIN/IEC 747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 36 Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages l l l trr International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behavior Epoxy meets UL 94V-0 flammability classification Applications l RthJC RthCK RthJA A A = Anode, C = Cathode , TAB = Cathode l 0.45-0.55/4-5 0.45-0.55/4-5 Weight Symbol A Maximum Ratings l l High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling 94538A © 1997 IXYS All rights reserved DSEK 30, 1200 V 70 A 60 50 6 µC 50 TVJ= 25°C TVJ=100°C TVJ=150°C 40 Qrr 3 max. I F=30A I F=60A I F=30A I F=15A IRM 30 30 20 2 20 typ. max. 10 1 10 0 typ. 0 0 0 1 2 3 V 4 1 0 100 A/µs 1000 10 Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. 1.4 Fig. 3 Peak reverse current versus -diF /dt. 60 V 1.0 µs 1.2 TVJ=100°C VR=540V 0.8 1.0 IRM 0.6 1200 ns 1000 50 VFR IF=30A IF=60A IF=30A IF=15A max. trr 0.8 400 A/µs 600 200 -diF/dt -diF/dt VF Kf TVJ=100°C VR= 540V 40 IF=30A IF=60A IF=30A IF=15A 4 IF A TVJ=100°C VR= 540V 5 800 40 tfr VFR 600 30 0.6 QR 400 20 0.4 0.4 tfr TVJ=125°C IF=30A 10 0.2 0.2 200 typ. 0.0 0 0 0 40 TVJ 80 120 °C 160 Fig. 4 Dynamic parameters versus junction temperature. 0 200 -diF/dt 400 A/µs 600 Fig. 5 Recovery time versus -diF /dt. 1.0 0 200 -diF/dt Fig. 6 Peak forward voltage versus -diF /dt. Dimensions K/W Dim. Millimeter Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 0.8 ZthJC 0.6 0.4 0.2 0.0 0.001 400 A/µs 600 0.01 t 0.1 1 s 10 M N Inches Min. Max. E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Fig. 7 Transient thermal impedance junction to case © 1997 IXYS All rights reserved 37