ETC DSEI2X101-12A

DSEI 2x 101
Fast Recovery
Epitaxial Diode (FRED)
VRSM
VRRM
V
V
600
600
VRRM = 600 V
IFAVM = 2x 96 A
= 35 ns
trr
miniBLOC, SOT-227 B
E72873
Type
DSEI 2x 101-06A
Symbol
Test Conditions
Maximum Ratings (per diode)
IF(RMS)
IF(AV)M ¬
IFRM
TVJ = TVJM
TC = 70°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
150
96
TBD
A
A
A
IFSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1200
1300
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1080
1170
A
A
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7200
7100
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5800
5700
A2s
A2s
-40...+150
150
-40...+150
°C
°C
°C
250
W
2500
V~
Features
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
matched diodes f. parallel operation
Planar passivated chips
two independent diodes
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
l
l
l
l
l
l
l
l
l
I2t
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Weight
30
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 100 A;
TVJ = 150°C
TVJ = 25°C
VF
VT0
rT
For power-loss calculations only
RthJC
RthCH
g
mA
mA
mA
1.17
1.25
V
V
0.70
4.7
V
mΩ
0.5
K/W
K/W
0.05
miniBLOC, SOT-227 B
Nm/lb.in.
Nm/lb.in.
Characteristic Values (per diode)
typ.
max.
3
1
20
l
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
IF = 1 A; -di/dt = 400 A/µs; VR = 30 V; TVJ = 25°C
35
50
ns
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
IRM
VR = 100 V; IF = 80 A; -diF/dt = 200 A/µs
L ≤ 0.05 mH; TVJ = 100°C
19
24
A
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
¬ IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
031
trr
D5 - 57
DSEI 2x 101, 600V
7
T = 100°C
µC VJ
V = 300V
6 R
150
A
125
IF
Qr
80
A TVJ= 100°C
70 VR = 300V
IRM 60
5
100
IF=200A
IF=100A
IF= 50A
4
75
TVJ=150°C
3
TVJ=100°C
2
50
IF=200A
IF=100A
IF= 50A
40
30
50
25
20
1
10
TVJ=25°C
0
0.0
0.5
1.0 V
VF
0
100
1.5
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
260
ns
240
1.4
1.2
trr
0
200
400
s 1000
600 A/
800
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
60
V
TVJ= 100°C
VR = 300V
TVJ= 100°C
IF = 100A
50
tfr
tfr
200
Qr
0.8
IRM
µs
2.5
2.0
40
1.0
3.0
VFR
220
Kf
0
A/s 1000
-diF/dt
IF=200A
IF=100A
IF= 50A
180
VFR
30
1.5
20
1.0
10
0.5
160
0.6
140
0.4
120
0
50
100
°C 150
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
600 A/
800
s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
1
K/W
0
0
400
600 800
diF/dt
0.0
1000
A/s
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
1
2
3
4
5
D=0.7
ZthJC
200
0.5
0.3
Rthi (K/W)
ti (s)
0.02
0.05
0.076
0.24
0.114
0.00002
0.00081
0.01
0.94
0.45
0.2
0.1
0.1
0.05
Single Pulse
0.05
0.001
DSEI 2x101-06
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
D5 - 58
© 2000 IXYS All rights reserved
DSEI 2x 101
Fast Recovery
Epitaxial Diode (FRED)
VRSM
VRRM
V
V
1200
1200
VRRM = 1200 V
IFAVM = 2x 91 A
= 40 ns
trr
miniBLOC, SOT-227 B
E72873
Type
DSEI 2x 101-12A
Symbol
Test Conditions
Maximum Ratings (per diode)
IF(RMS)
IF(AV)M ¬
IFRM
TVJ = TVJM
TC = 50°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
IFSM
TVJ = 45°C;
Features
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
matched diodes f. parallel operation
Planar passivated chips
two independent diodes
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
l
130
91
TBD
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
900
970
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
810
870
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
4100
4000
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
3300
3200
A2s
A2s
-40...+150
150
-40...+150
°C
°C
°C
250
W
2500
V~
l
l
l
l
l
l
l
l
I2t
TVJ = 45°C
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Weight
30
Symbol
Test Conditions
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
IF = 100 A;
TVJ = 150°C
TVJ = 25°C
VF
VT0
rT
RthJC
RthCH
g
3
1.5
15
mA
mA
mA
1.61
1.87
V
V
1.01
6.1
V
mΩ
0.5
K/W
K/W
0.05
miniBLOC, SOT-227 B
Nm/lb.in.
Nm/lb.in.
Characteristic Values (per diode)
typ.
max.
For power-loss calculations only
l
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
trr
IF = 1 A; -di/dt = 400 A/µs; VR = 30 V; TVJ = 25°C
40
60
ns
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
IRM
VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs
L ≤ 0.05 mH; TVJ = 100°C
24
30
A
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
¬ IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
008
D5 - 59
DSEI 2x 101, 1200V
16 T = 100°C
µC VVJ= 600V
14 R
150
A
125
IF
140
TVJ= 100°C
A
VR =600V
120
IRM
Qr 12
100
100
10
IF=200A
IF=100A
IF= 50A
TVJ=150°C
8
75
TVJ=100°C
80
6
50
TVJ= 25°C
40
4
25
20
2
0
0.0
0.5
IF=200A
IF=100A
IF= 50A
60
1.5 V
VF
1.0
0
100
2.0
Fig. 1 Forward current IF versus VF
A/s 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
500
1.4
450
1.2
400
s 1000
600 A/
800
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
TVJ= 100°C
IF = 100A
50
VFR
400
40
350
30
IRM
IF=200A
IF=100A
IF= 50A
300
µs
tfr
tfr
0.8
1.5
1.0
1.0
VFR
0.5
20
Qr
0.6
10
250
0.4
200
0
40
80
120 °C 160
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
600 A/
800
s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
1
K/W
0
0
200
400
600 800
diF/dt
0.0
1000
A/s
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
1
2
3
4
5
D=0.7
ZthJC
200
V
trr
Kf
0
60
TVJ= 100°C
VR = 600V
ns
0
0.5
0.3
Rthi (K/W)
ti (s)
0.02
0.05
0.076
0.24
0.114
0.00002
0.00081
0.01
0.94
0.45
0.2
0.1
0.1
0.05
Single Pulse
0.05
0.001
DSEI 2x101-12
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
D5 - 60
© 2000 IXYS All rights reserved