DSEI 12-12A Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 1200 1200 IFAV = 11A VRRM=1200V trr = 50s Type A C TO-220 AC C A DSEI 12-12A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tp < 10 µs; rep. rating, pulse width limited by TVJM IFSM TVJ = 45°C; 25 11 150 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 75 80 A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 65 70 A TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 28 27 A2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 21 20 A2s -40...+150 150 -40...+150 °C °C °C 78 W 0.4...0.6 Nm 2 g TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical Symbol Conditions Features •International standard package JEDEC TO-220 AC •Planar passivated chips •Very short recovery time •Extremely low switching losses •Low IRM-values •Soft recovery behaviour •Epoxy meets UL 94V-0 Applications •Antiparallel diode for high frequency switching devices •Anti saturation diode •Snubber diode •Free wheeling diode in converters and motor control circuits •Rectifiers in switch mode power supplies (SMPS) •Inductive heating and melting •Uninterruptible power supplies (UPS) •Ultrasonic cleaners and welders Characteristic Values typ. Advantages max. IR VR = VRRM VR = 0.8·VRRM VR = 0.8·VRRM TVJ = 25°C TVJ = 25°C TVJ = 125°C 250 150 4 µA µA mA VF IF = 12 A TVJ = 150°C TVJ = 25°C 2.2 2.6 V V VT0 rT For power-loss calculations only TVJ = TVJM 1.65 46.2 V mW 1.6 60 K/W K/W K/W RthJC RthCH RthJA 0.5 trr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C 50 70 ns IRM VR = 540 V; IF = 12 A; -diF/dt = 100 A/µs L < 0.05 µH; TVJ = 100°C 6.5 7.2 A IFAVM rating includes reverse blocking losses at TVJM. VR = 0.8·VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved •High reliability circuit operation •Low voltage peaks for reduced protection circuits •Low noise switching •Low losses •Operating at lower temperature or space saving by reduced cooling 20071004 I2t Maximum Ratings -3 DSEI 12-12A 3.0 2.5 20 Qr [µC] IF [A] 10 TVJ = 100°C VR = 540 V 25 max IF = 11 A 22 A 11 A 5.5 A 1.5 15 1.0 10 0.5 5 max IF = 11 A 22 A 11 A 5.5 A 20 2.0 TVJ = 150°C 100°C 25°C 30 TVJ = 100°C VR = 540 V IRM [A] 30 typ. typ. 0 1 2 VF [V] 0.0 3 Fig. 1 Forward current versus voltage drop 1 10 100 -diF/dt [A/µs] 1.0 1.2 trr [ns] 0.8 IRM IF = 11 A 22 A 11 A 5.5 A max 0.4 1200 50 1000 40 800 TVJ = 125°C IF = 11 A 30 0.2 0 40 80 120 TVJ [°C] 160 Fig. 4 Dynamic parameters versus junction temperature 0.0 100 200 300 -diF /dt [A/µs] 400 Fig. 5 Recovery time versus -diF /dt 0 600 tfr 10 0 400 60 0 400 200 VFR typ. 0.2 300 20 Qr 0.4 0.6 200 tfr [µs] Kf 1.0 100 Fig. 3 Peak reverse current versus -diF /dt TVJ = 100°C VR = 540 V 0.8 0 -diF/dt [A/µs] Fig. 2 Recovery charge versus -diF /dt 1.4 0.6 0 1000 VFR [V] 0 100 200 300 diF /dt [A/µs] 0 400 Fig. 6 Peak forward voltage versus diF /dt 2.0 ZthJC [k/W] 1.6 1.2 0.8 0.4 0.0 0.001 DSEI 12-10A 0.01 0.1 t [s] 1 10 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 20071004 Fig. 7 Transient thermal resistance junction to case -3 DSEI 12-12A IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 20071004 Dimensions TO-220 AC -3