Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 16 A IC90 TC = 90°C 8 A ICM TC = 25°C, 1 ms 40 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 PC TC = 25°C 190 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C ICM = 40 @ 0.8 VCES TJ Md Mounting torque (M3) (TO-247) Weight TO-247 TO-268 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2003 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE IGES °C 6 4 1700 3.0 Note 1 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4.0 4.8 G E C (TAB) TO-247 AD (IXGH) G µs 300 TO-268 (IXGT) A 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s = 1700 V = 16 A = 5.0 V = 40 ns 5.0 V V 50 750 µA µA ±100 nA 5.0 V V G = Gate, E = Emitter, C (TAB) C E C = Collector, TAB = Collector Features z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) DS98993(01/03) IXGH IXGT Symbol Test Conditions gfs IC = IC25; VCE = 10 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes 6 10 S 1700 pF 83 pF 30 pF 65 nC 13 nC 24 nC 36 ns VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC25, VGE = 15 V td(off) RG = 10 Ω, VCE = 0.8 VCES Note 3 tfi 57 ns 200 350 ns 40 150 ns Eoff 0.9 1.5 mJ td(on) Inductive load, TJ = 125°°C 38 ns tri IC = IC25, VGE = 15 V 59 ns Eon td(off) RG = 10 Ω, VCE = 0.8 VCES Note 3 1.5 200 mJ ns tfi 55 ns Eoff 1.1 mJ 0.25 0.65 K/W K/W RthJC RthCK (TO-247) Notes: 1. 16N170A 16N170A TO-247 AD Outline ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Dim. A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1