Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 12 A IC90 TC = 90°C 6 A ICM TC = 25°C, 1 ms 24 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load ICM = 16 V CES = 1350 A V PC TC = 25°C 75 W °C -55 ... +150 TJ TJM 150 °C Tstg -55 ... +150 °C Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Mounting torque (M3) Weight TO-247 AD TO-268 °C 300 °C 260 1.13/10Nm/lb.in. VCES = 1700 V = 12 A IC25 VCE(sat) = 3.6 V TO-268 (IXBT) G E TO-247 AD (IXBH) G G = Gate, E = Emitter, g g z z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE BVCES VGE(th) IC IC ICES VCE = 0.8 VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2003 IXYS All rights reserved 1700 3.0 TJ = 25°C TJ = 125°C TJ = 125°C 3.0 3.3 C (TAB) C E C = Collector, TAB = Collector Features z 6 4 (TAB) High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications z z z 6 V V 10 100 µA µA ±100 nA z 3.6 V V z z AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits Advantages z High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) DS99004(02/03) IXBH 6N170 IXBT 6N170 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3 4 S ∅P 330 pF 23 pF Cres 6 pF Qg 20 nC 3.6 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 8 nC td(on) 25 ns 18 ns tri Inductive load, TJ = 25°°C td(off) IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 120 Ω tfi 600 1000 ns 1110 1600 ns Eoff 4 6 mJ td(on) 25 ns 20 ns tri Eon td(off) tfi Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 120 Ω 0.7 mJ 660 ns 1600 ns 5 mJ Eoff e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline 1.65 K/W RthJC RthCK TO-247 AD Outline (TO-247) Reverse Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF t = IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% IRM t rr IF vR = 6 A, VGE = 0 V, -diF/dt = 50 A/us = 100A 3.0 6 360 V A ns Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1