IXFX 73N30Q IXFK 73N30Q Q-CLASS VDSS = 300 V ID25 = 73 A Ω RDS(on) = 42 mΩ Single MOSFET Die trr ≤ 250 µs HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 73 292 73 A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ TJM Tstg 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque (TO-264) Weight PLUS 247 TO-264 Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 300 V VGS(th) VDS = VGS, ID = 4mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 ±100 nA IDSS VDS = VDSS 0.8 VDSS VGS = 0 V 100 µA 2 mA RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2001 IXYS All rights reserved (TAB) D TO-264 AA (IXFK) G D TL 0.4/6 Nm/lb.in. 6 10 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 125°C G 42 mΩ G = Gate S = Source (TAB) S D = Drain TAB = Drain Features l IXYS advanced low Qg process l Low gate charge and capacitances - easier to drive - faster switching l International standard packages l Low RDS (on) l Rated for unclamped Inductive load switching (UIS) rated l Molding epoxies meet UL 94 V-0 flammability classification Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l 98870 (12/01) IXFK 73N30Q IXFX 73N30Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25 Note 1 30 Ciss S 6400 pF 1340 pF Crss 340 pF td(on) 37 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 47 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 36 ns td(off) RG = 1 Ω (External) 82 ns 12 ns 190 nC 51 nC 78 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.26 RthJC 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. trr QRM K/W IF = 25A, -di/dt = 100 A/µs, VR = 100 V IRM 73 A 292 A 1.5 V 250 ns 0.8 µC 7 A Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1