IXFN 280N07 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS(on) t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 70 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IL(RMS) TC = 25°C, Chip capability Terminal current limit 280 100 A A IDM IAR TC = 25°C, pulse width limited by TJM TC = 25°C 1120 180 A A EAR TC = 25°C 60 mJ EAS TC = 25°C 3 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns 600 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 2500 3000 V~ V~ VISOL Md 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 70 VGH(th) VDS = VGS, ID = 8 mA 2.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = 120A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2002 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C miniBLOC, SOT-227 B (IXFN) E153432 S G TJ ≤ 150°C, RG = 2 Ω TC = 25°C 70 V 280 A Ω 5 mΩ 250 ns S Symbol PD = = = < V 4.0 V ±200 nA 100 2 µA mA 5 mΩ S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features •International standard packages •miniBLOC, with Aluminium nitride isolation •Low RDS (on) HDMOSTM process •Rugged polysilicon gate cell structure •Unclamped Inductive Switching (UIS) rated •Low package inductance •Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density 98555B (1/02) IXFN 280N07 Symbol Test Conditions gfs VDS = 15 V; 60A, pulse test Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 90 S 9400 pF 4600 pF 2550 pF td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 90A td(off) RG = 1 Ω (External), 65 ns 90 ns 140 ns 55 ns Qg(on) 420 nC 65 nC 220 nC VGS = 10 V, VDS, ID = 100A Qgd RthJC 0.22 RthCK 0.05 Source-Drain Diode M4 screws (4x) supplied Dim. tf Qgs miniBLOC, SOT-227 B K/W K/W Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = 100A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr QRM IRM IF = 50A, -di/dt = 100 A/µs VR = 50V TJ = 25°C 280 A 1120 A 1.3 V 200 ns µC A 1.2 10 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1