HiPerFETTM Power MOSFET IXFX 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) = 500 V = 32 A = 0.15 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 32 120 32 A A A EAS EAR TC = 25°C TC = 25°C 1.5 45 J mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 6 g TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Weight Symbol VDSS VGS(th) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS= 0 V, ID = 1 mA VDSS temperature coefficient 500 VDS= VGS, ID = 4 mA VGS(th) temperature coefficient 2 4 V %/K ±100 nA -0.206 IGSS VGS= ±20 VDC, VDS = 0 IDSS VDS= 0.8 • VDSS VGS= 0 V RDS(on) VGS = 10 V, ID = 15A Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V %/K 0.102 200 mA 1 mA 0.15 W PLUS 247 G = Gate S = Source D = Drain Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98719A (7/00) 1-2 IXFX 32N50 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Min. Characteristic Values Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test C iss Coss C rss VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) tr td(off) tf VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 W (External) 35 42 110 26 Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 227 29 110 300 40 145 0.15 0.35 K/W K/W RthJC RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD 18 28 4950 620 240 QRM IRM S 5450 730 310 pF pF pF ns ns ns ns nC nC nC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 32 A Repetitive; pulse width limited by TJM 128 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns t rr IF = IS -di/dt = 100 A/ms, VR = 100 V © 2000 IXYS All rights reserved PLUS247TM Outline 0.85 mC 8 A Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 2-2