IXYS IXFN44N80

IXFN 44N80
HiPerFETTM
Power MOSFETs
Single MOSFET Die
VDSS
ID25
RDS(on)
=
800 V
=
44 A
= 0.165 W
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
G
S
S
Symbol
Test Conditions
Maximum Ratings
V DSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
800
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C, Chip capability
44
A
IDM
TC = 25°C, pulse width limited by TJM
IAR
176
A
TC = 25°C
44
A
EAR
TC = 25°C
64
mJ
EAS
TC = 25°C
4
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
700
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
2500
3000
V~
V~
TJ
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
Mounting torque
Terminal connection torque
t = 1 min
t=1s
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
Symbol
30
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
800
VGH(th)
V DS = VGS, ID = 8 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V GS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
© 2001 IXYS All rights reserved
g
TJ = 25°C
TJ = 125°C
V
4.0
V
±200
nA
100
2
mA
mA
0.165
W
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
•
•
•
•
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
• Easy to mount
•
•
Space savings
High power density
98594B (02/01)
IXFN 44N80
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 15 V; ID = 0.5 • ID25, pulse test
32
Ciss
Coss
50
S
10000
pF
1300
pF
330
pF
35
ns
48
ns
100
ns
24
ns
380
nC
70
nC
170
nC
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 W (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.18
RthCK
0.05
Source-Drain Diode
K/W
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
I F = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t rr
QRM
IRM
K/W
miniBLOC, SOT-227 B
I F = 25A, -di/dt = 100 A/ms, VR = 100 V
1.2
8
44
A
176
A
1.3
V
250
ns
mC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025