HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS(on) = 130 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 38 60 44 A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS G = Gate S = Source D = Drain * Patent pending Features TJ TJM Tstg TL ISOPLUS 247TM E153432 t = 1 min Weight • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V. ID = 250mA 600 V VGS(th) VDS = VGS. ID = 4mA 2.5 4.5 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 100 mA 2 mA 130 mW • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC & DC motor control Advantages • • • • Easy assembly Space savings High power density Low noise to ground 98728 (06/09/00) 1-2 IXFR 44N60 Symbol Test Conditions gfs VDS = 10 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Notes 2, 3 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 30 45 S 8900 pF 1000 pF 330 pF 42 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 55 ns td(off) RG = 2.0 W (External), Notes 2, 3 110 ns 45 ns 330 nC 60 nC 65 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Notes 2, 3 Qgd RthJC 0.30 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 44 A Repetitive; Note 1 176 A IF = IT, VGS = 0 V, Notes 2, 3 1.3 V 250 ns t rr QRM K/W IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM 1.4 mC 8 A ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 3. IT = 22A © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2