High Voltage IGBT with Diode VCES IC25 VCE(sat) IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Maximum Ratings TO-3P (IXGQ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC110 TC = 110°C 20 A ICM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 40 @0.8 VCES A PC TC = 25°C 190 W -55 ... +150 °C z TJM 150 °C z Tstg -55 ... +150 °C TJ Md Mounting torque °C 6 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. z IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 20A, VGE = 15 V Note 2 © 2003 IXYS All rights reserved 2.5 20N120B 20N120BD1 TJ=125°C 2.9 2.8 5.0 V 25 50 µA µA ±100 nA 3.4 V V (TAB) C = Collector TAB = Collector International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z z = 250 µA, VCE = VGE VGE(th) E Features z Weight Test Conditions 300 C G = Gate E = Emitter 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol G z Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost DS99136(12/03) IXGQ 20N120B IXGQ 20N120BD1 Symbol Test Conditions gfs IC = 20A; VCE = 10 V, Note 2. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 Cies 20N120B Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 20N120BD1 Cres Qg IC = 20A, VGE = 15 V, VCE = 0.5 VCES Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) Inductive load, TJ = 25°°C IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1. Inductive load, TJ = 125°°C IC = 20A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Ω Note 1 tfi Eoff RthJC RthCK (TO-247) Reverse Diode (FRED) 16 S 1700 70 pF pF 80 pF 23 pF 62 nC 9 nC 24 nC 20 ns 14 ns 270 380 160 2.1 320 n s 3.5 mJ 25 ns 18 ns 1.4 mJ 270 ns 360 4.5 ns mJ 0.25 0.65 K/W K/W ns Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IF TC = 90°C 10 A VF IF = 10 A, VGE = 0 V 3.3 V IRM t rr IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V; TJ = 125°C t rr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 14 120 A ns 40 ns 2.5 K/W RthJC Notes: TO-3P (IXGQ) Outline 1. 2. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGQ 20N120B IXGQ 20N120BD1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extende d Output Characteris tics @ 25 deg. C 40 160 VGE = 15V 13V 11V 9V I C - Amperes 30 VGE = 15V 140 13V 120 I C - Amperes 35 25 20 7V 15 11V 100 80 9V 60 10 40 5 20 7V 5V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 14 16 18 20 1.5 VGE = 15V 13V 11V 9V 30 VGE = 15V 1.4 V C E (sat)- Normalized 35 I C - Amperes 12 Fig. 4. Depende nce of V CE(sat) on Tem perature 40 25 20 7V 15 10 5 I C = 40A 1.3 1.2 1.1 I C = 20A 1.0 0.9 I C = 10A 0.8 5V 0 0.7 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 0 V CE - Volts 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. Colle ctor-to-Em itter Voltage vs . Gate-to-Em iite r voltage Fig. 6. Input Adm ittance 60 6.5 TJ = 25ºC 6 50 5.5 5 I C = 40A 20A 10A 4.5 4 I C - Amperes VC E - Volts 10 V C E - Volts V C E - Volts 3.5 3 2.5 40 30 20 TJ = 125ºC 25ºC -40ºC 10 2 0 1.5 6 7 8 9 10 11 12 13 V G E - Volts © 2003 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 150 IXGQ 20N120B IXGQ 20N120BD1 Fig. 8. Dependence of Turn-off Ene rgy Loss on RG Fig. 7. Trans conductance 24 16 21 12 E off - milliJoules g f s - Siemens 18 15 12 9 8 I C = 20A 6 4 3 2 0 0 10 20 30 40 50 I C = 40A 10 6 0 TJ = 125ºC VGE = 15V VCE = 960V 14 TJ = -40ºC 25ºC 125ºC 60 I C = 10A 10 30 50 70 I C - Amperes Fig. 9. Dependence of Turn-Off Ene rgy Loss on Ic 110 130 150 Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature 14 14 R G = 10Ω R G = 100Ω - - VGE = 15V VCE = 960V TJ = 125ºC 10 8 TJ = 125ºC 6 R G = 10Ω R G = 100Ω - - VGE = 15V VCE = 960V 12 E off - milliJoules 12 E off - MilliJoules 90 R G - Ohms 4 10 I C = 40A 8 6 I C = 20A 4 TJ = 25ºC 2 2 0 0 I C = 10A 10 15 20 25 I C - Amperes 30 35 25 40 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Sw itching Tim e on RG Fig. 12. Depe ndence of Turn-off Sw itching Tim e on Ic 550 1400 td(off) tfi - - - - - - 1200 Switching Time - nanoseconds Switching Time - nanoseconds 35 TJ = 125ºC VGE = 15V VCE = 960V 1000 800 I C = 10A I C = 40A 600 400 I C = 20A 200 10 30 50 70 td(off) tfi - - - - - - 500 R G = 10Ω VGE = 15V VCE = 960V 450 400 TJ = 125ºC 350 300 250 TJ = 25ºC 200 90 R G - Ohms 110 130 150 10 15 20 25 30 35 40 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGQ 20N120B IXGQ 20N120BD1 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature 15 td(off) tfi - - - - - - 450 R G = 10Ω VGE = 15V VCE = 960V 400 350 VCE = 600V IC = 20A IG = 10mA I C = 40A 12 VG E - Volts Switching Time - nanoseconds 500 Fig. 14. Gate Charge I C = 10A I C = 20A 300 9 6 I C = 40A 3 250 200 0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 0 10 20 30 40 50 60 70 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 V C E - Volts 30 35 40 Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1.0 0.5 0.1 1 © 2003 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000 IXGQ 20N120B IXGQ 20N120BD1 2000 30 A IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 1000 15 40 TVJ= 100°C VR = 600V 30 IF= 20A IF= 10A IF= 5A 20 TVJ=100°C 10 500 TVJ= 25°C 10 5 0 0 1 2 3 VF 0 100 4V Fig. 17 Forward current IF versus VF Fig. 18 Reverse recovery charge Qr versus -diF/dt 2.0 150 140 0.0 Qr 0 40 TVJ= 100°C IF = 10A V tfr 1.2 µs tfr VFR 0.8 40 110 0.5 600 A/µs 800 1000 -diF/dt IF= 20A IF= 10A IF= 5A 120 IRM 400 80 130 1.0 200 Fig. 19 Peak reverse current IRM versus -diF/dt VFR trr Kf 0 120 TVJ= 100°C VR = 600V ns 1.5 0 A/µs 1000 -diF/dt 0.4 100 80 120 °C 160 90 0 200 400 600 TVJ 800 1000 A/µs 0 0 200 400 -diF/dt Fig. 20 Dynamic parameters Qr, IRM versus TVJ Fig. 21 Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/µs 800 1000 diF/dt Fig. 22 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-12A 0.0001 0.001 0.01 0.1 s t 1 Fig. 23 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343