Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC110 TC = 110°C 16 A IF110 TC = 110°C (IXG_16N60B2D1 diode) 11 A ICM TC = 25°C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load ICM = 32 @0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque TO-247 (IXGH) G Weight E G = Gate E = Emitter C = Collector TAB = Collector Features z z 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s C 300 °C z 6 g z International standard packages IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z Symbol Test Conditions VGE(th) IC = 250 µA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 12A, VGE = 15 V Note 2 © 2005 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ=125°C TJ=125°C 1.8 5.0 V 50 1 µA mA ±100 nA 2.3 V V z z Saves space (two devices in one package) Easy to mount with 1 screw Reduces assembly time and cost DS99178A(12/05) IXGH 16N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = 12A; VCE = 10 V, Note 2. Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 8 Coes Cres S 780 pF 65 19 pF pF 32 nC Qge 6 nC Qgc 10 nC td(on) 25 ns 15 ns Qg tri td(off) tfi Eoff IC = 20A, VGE = 15 V, VCE = 0.5 VCES 12 Inductive load, TJ = 25°°C IC = 12 A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Ω Note 1. Eon td(off) tfi Eoff Symbol ns 150 260 µJ 18 ns 700 µJ 110 ns 170 ns 350 µJ 0.25 0.83 K/W K/W IC = 12A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Ω Note 1 Reverse Diode (FRED) ns 150 ns Inductive load, TJ = 125°°C RthJC RthCK 150 80 25 td(on) tri 70 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions VF IF = 10 A, VGE = 0 V TJ = 125 °C IRM IF = 12 A; -diF/dt = 100 A/µs, VR = 100 V t rr VGE = 0 V; TJ = 125 °C t rr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 2.66 1.66 V V 2.5 A 110 ns 30 ns 2.5 K/W RthJC Notes: TO-247 Outline 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. 2. Pulse test, t < 300 µs, duty cycle d < 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344