Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60C VDSS ID25 RDS(on) 600 V 38 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM E153432 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C dv/dt VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C EAS EAR ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Symbol Conditions RDSon VGS = 10 V; ID = ID90 VGSth VDS = 20 V; ID = 3 mA; IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS Qg Qgs Qgd td(on) tr td(off) tf VF 600 V ±20 V 38 25 A A 6 V/ns 1.8 1 J mJ G Isolated base* D G = Gate D = Drain S = Source * Patent pending Features ● ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO247AD compatible - Easy clip assembly ● fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness ● Enhanced total power density Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 70 mΩ 3.5 5.5 60 VGS = ±20 V; VDS = 0 V V 25 µA µA 100 nA VGS= 10 V; VDS = 350 V; ID = 50 A 220 55 125 nC nC nC VGS= 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 Ω 30 95 100 10 ns ns ns ns (reverse conduction) IF = 20 A; VGS = 0 V RthJC 0.9 1.1 Applications ● ● ● ● ● Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating V 0.45 K/W CoolMOS is a trademark of IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved 109 Infineon Technologies AG. 1-2 IXKR 40N60C Component ISOPLUS 247 OUTLINE Symbol Conditions VISOL IISOL ≤ 1 mA; 50/60 Hz TVJ Tstg TL 1.6 mm from case for 10 s FC mounting force with clip Symbol Conditions RthCH with heatsink compound Weight Maximum Ratings 2500 V~ -40...+150 -40...+125 °C °C 300 °C 20 ... 120 N Characteristic Values min. typ. max. 0.25 K/W 6 g 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 109 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 © 2001 IXYS All rights reserved 2-2