ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20 V ID25 TC = 25°C 25 A ID90 TC = 90°C 9 A ID(RMS) Package lead current limit 45 A EAS EAR Io Io 690 0.5 mJ mJ dv/dt VDS < VDSS, IF ≤ 17 A, TVJ = 150°C dIR/dt = 100 A/µs PD TC = 25°C = 10A, TC = 25°C = 20A 6 V/ns 250 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +125 °C 300 °C V~ TL 1.6 mm (0.062 in.) from case for 10 s VISOL RMS leads-to-tab, 50/60 Hz, t = 1 minute 2500 Md Mounting torque 0.9 / 6 Weight Symbol 8 Test Conditions VGS = 10 V, ID = ID90, Note 1 VGS = 10 V, ID = ID90, Note 1 TJ = 125°C VGS(th) VDS = VGS, ID = 2 mA IDSS VDS = VDSS VGS = 0 V VGS = ±20 VDC, VDS = 0 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. RDS(on) IGSS Nm/lb-in 126 297 2 TJ = 25°C TJ = 125°C 150 mΩ mΩ 4 V 50 µA µA 10 ±200 nA VDSS = 800 V ID25 = 25 A Ω RDS(on) = 150 mΩ ISO264TM G D (TAB) S G = Gate, S = Source D = Drain, * Patent pending Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<40pF) z Applications Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) z Power Factor Correction (PFC) z Welding z Inductive Heating z z Advantages z z z Easy assembly Space savings High power density CoolMOS is a trademark of Infineon Technology. © 2003 IXYS All rights reserved DS99099(10/03) IXKG 25N80C Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Qg(on) 166 nC 18 nC Qgd 84 nC td(on) 25 ns Qgs VGS = 10 V, VDS = 640 V, ID = 17 A tr VGS = 10 V, VDS = 640V 25 ns td(off) ID = 35 A, RG = 2.2 Ω 75 ns 10 ns tf RthJC 0.5 RthCH ISO264 OUTLINE K/W 0.30 K/W ✦ Reverse Conduction Symbol Test Conditions VSD IF = 12.5 A, VGS = 0 V Note 1 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - No Connection Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1 1.2 V Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665