IXYS IXKC20N60C

CoolMOSTM Power MOSFET IXKC 20N60C
in ISOPLUS220TM Package
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low RDS(on), Superjunction MOSFET
VDSS
= 600 V
ID25
= 14 A
Ω
RDS(on) = 190 mΩ
Preliminary Data Sheet
Symbol
Test Conditions
ISOPLUS 220LVTM
E153432
Maximum Ratings
VDSS
TJ = 25°C to 150°C
600
V
VGS
Continuous
±20
V
ID25
TC = 25°C; Note 1
14
A
ID90
TC = 90°C, Note 1
10
A
ID(RMS)
Package lead current limit
45
A
EAS
EAR
Io
Io
690
1
mJ
mJ
PD
TC = 25°C
125
W
= 10A, TC = 25°C
= 20A
G
D
G = Gate,
S = Source
-55 ... +150
°C
TJM
150
°C
Features
Tstg
-55 ... +125
°C
z
1.6 mm (0.062 in.) from case for 10 s
300
°C
VISOL
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
FC
Mounting force
11 ... 65 / 2.4 ...11 N/lb
Weight
3
g
Isolated back surface*
D = Drain,
* Patent pending
TJ
TL
S
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z 3RD generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
z Low thermal resistance due to reduced
chip thickness
z Low drain to tab capacitance(<30pF)
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
RDS(on)
VGS = 10 V, ID = ID90, Note 3
VGS = 10 V, ID = ID90, Note 3 TJ = 125°C
VGS(th)
VDS = VGS, ID = 1 mA
IDSS
VDS = VDSS
VGS = 0 V
IGSS
VGS = ±20 VDC, VDS = 0
160
463
3.5
TJ = 25°C
TJ = 125°C
190 mΩ
mΩ
5.5
V
1
µA
µA
10
±100
nA
Switched Mode Power Supplies (SMPS)
Uninterruptible Power Supplies (UPS)
z Power Factor Correction (PFC)
z Welding
z Inductive Heating
z
z
Advantages
z
z
z
Easy assembly: no screws or isolation
foils required
Space savings
High power density
CooLMOS is a trademark of Infineon
Technologies, AG
© 2004 IXYS All rights reserved
DS98848C(1/04)
IXKC 20N60C
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Qg(on)
79
nC
21
nC
Qgd
46
nC
td(on)
20
ns
Qgs
VGS = 10 V, VDS = 350 V, ID = 20 A
tr
VGS = 10 V, VDS = 380V
55
ns
td(off)
ID = 20 A, RG = 3.3 Ω
60
ns
10
ns
tf
RthJC
1
RthCH
0.30
Reverse Conduction
Symbol
Test Conditions
VSD
IF = 10 A, VGS = 0 V
Note 3
TO-220LV Outline
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
0.8
1.2
V
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
6,404,065B1
6,259,123B1
6,162,665
6,306,728B1
6,534,343