IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V "S" Series - Improved SCSOA Capability C G E Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 V V GES Continuous ±20 V V GEM Transient ±30 V IC25 T C = 25°C 30 A IC90 T C = 90°C 15 A ICM T C = 25°C, 1 ms 60 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH ICM = 30 @ 0.8 VCES A tsc TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω PC T C = 25°C TJ T STG Md C 5 µs 150 W -55 ... +150 °C 150 °C -55 ... +150 °C TJM Mounting torque . 1.15/10 Nm/lb-in. Weight 6 Max. Lead Temperature for Soldering (1.6mm from case for 10s) g 300 Symbol Test Conditions (TJ = 25°C unless otherwise specified) °C Characteristic Values Min. Typ. Max. BV CES IC = 4.0 mA, V GE = 0 V 1200 V GE(th) IC = 1.5 mA, VCE = V GE 4 I CES VCE = 0.8 VCES , VGE= 0 V Note 2 I GES VCE = 0 V, VGE = ±20 V V CE(sat) IC = IC90, VGE = 15 V TJ = 25°C TJ = 125°C © 1994 IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 V 8 TO-247AD V G E Features • High frequency IGBT with guaranteed Short Circuit SOA capability. • IGBT with anti-parallel diode in one package • 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • DC choppers Advantages • Saves space (two devices in one package) • Easy to mount (isolated mounting hole) • Reduces assembly time and cost • Operates cooler • Easier to assemble 500 µA 8 mA + 100 nA 4.0 V 94522B(6/95) IXYS Semiconductor GmbH POB 1180; D-68619; Lampertheim, Germany Tel: +49-6206-5030; Fax: +49-6206-503627 IXSH15N120AU1 Symbol Test Conditions (T J = 25°C unless otherwise specified) Characteristic Values Min Typ. Max. gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 µs, duty cycle < 2 % IC(on) VGE = 15V, VCE = 10 V Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 7 S 65 A 1800 pF Coes 160 pF Cres 45 pF 75 nC Qge 20 nC Qgc 35 nC Qg IC 6 = Ic90, VGE = 15 V, VCE = 0.5 VCES td(on) Inductive load, TJ = 25°C 100 ns tri IC 200 ns td(off) RG = 82 Ω, VCLAMP = 0.8 VCES 450 ns tfi Note 1 600 ns = IC90, VGE = 15 V, L = 100µH tc 750 ns Eoff 5.4 mJ td(on) Inductive load, TJ = 125°C 100 ns tri IC 200 ns E(on) RG = 82 Ω TBD mJ td(off) VCLAMP = 0.8 VCES tfi Note 1 = IC90, VGE = 15 V, L = 100µH TO-247AD (IXSH) ns 900 ns tc 1200 ns Eoff 14.5 mJ 0.83 K/W RthJC 0.25 RthCK Reverse Diode (FRED) K/W Characteristic Values (TJ = 25ºC unless otherwise specified) Min. Typ. Max. VF IF = IC90, VGE = 0V Pulse test, t< 300 µs, duty cycle < 2% TJ = 125ºC trr IF = 1A; di/dt = -100A/µs; VR = 30V; TJ = 25ºC IRM IF = IC90, VGE = 0V, -diF /dt = 240 A/µs trr TJ = 100ºC, VR = 540V 2.3 2.1 V 40 60 ns 16 18 A 300 RthJC ns 1.0 K/W Notes: 1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or RG values. 2) Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 IXYS Semiconductor GmbH POB 1180; D-68619; Lampertheim, Germany Tel: +49-6206-5030; Fax: +49-6206-503627