IXYS IXSH15N120AU1

IXSH15N120AU1
PRELIMINARY DATA SHEET
IGBT with Diode
IC25
=
30 A
VCES = 1200 V
VCE(sat) = 4.0 V
"S" Series - Improved SCSOA Capability
C
G
E
Symbol
Test Conditions
Maximum Ratings
V CES
T J = 25°C to 150°C
1200
V
V CGR
T J = 25°C to 150°C; RGE = 1 MΩ
1200
V
V GES
Continuous
±20
V
V GEM
Transient
±30
V
IC25
T C = 25°C
30
A
IC90
T C = 90°C
15
A
ICM
T C = 25°C, 1 ms
60
A
SSOA
(RBSOA)
VGE = 15 V, TJ = 125°C, RG = 82 Ω
Clamped inductive load, L = 100 µH
ICM = 30
@ 0.8 VCES
A
tsc
TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω
PC
T C = 25°C
TJ
T STG
Md
C
5
µs
150
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
TJM
Mounting torque
.
1.15/10 Nm/lb-in.
Weight
6
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
g
300
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
°C
Characteristic Values
Min. Typ.
Max.
BV CES
IC
= 4.0 mA, V GE = 0 V
1200
V GE(th)
IC
= 1.5 mA, VCE = V GE
4
I CES
VCE = 0.8 VCES , VGE= 0 V
Note 2
I GES
VCE = 0 V, VGE = ±20 V
V CE(sat)
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
© 1994 IXYS Corporation. All rights reserved.
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
V
8
TO-247AD
V
G
E
Features
• High frequency IGBT with guaranteed
Short Circuit SOA capability.
• IGBT with anti-parallel diode in one
package
• 2nd generation HDMOSTM process
Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies
(UPS)
• Switched-mode and resonant-mode
power supplies
• DC choppers
Advantages
• Saves space (two devices in one
package)
• Easy to mount (isolated mounting hole)
• Reduces assembly time and cost
• Operates cooler
• Easier to assemble
500 µA
8 mA
+ 100 nA
4.0
V
94522B(6/95)
IXYS Semiconductor GmbH
POB 1180; D-68619; Lampertheim, Germany
Tel: +49-6206-5030; Fax: +49-6206-503627
IXSH15N120AU1
Symbol
Test Conditions
(T J = 25°C unless otherwise specified)
Characteristic Values
Min
Typ.
Max.
gfs
IC = IC90, VCE = 10 V,
Pulse test, t < 300 µs, duty cycle < 2 %
IC(on)
VGE = 15V, VCE = 10 V
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz
7
S
65
A
1800
pF
Coes
160
pF
Cres
45
pF
75
nC
Qge
20
nC
Qgc
35
nC
Qg
IC
6
= Ic90, VGE = 15 V, VCE = 0.5 VCES
td(on)
Inductive load, TJ = 25°C
100
ns
tri
IC
200
ns
td(off)
RG = 82 Ω, VCLAMP = 0.8 VCES
450
ns
tfi
Note 1
600
ns
= IC90, VGE = 15 V, L = 100µH
tc
750
ns
Eoff
5.4
mJ
td(on)
Inductive load, TJ = 125°C
100
ns
tri
IC
200
ns
E(on)
RG = 82 Ω
TBD
mJ
td(off)
VCLAMP = 0.8 VCES
tfi
Note 1
= IC90, VGE = 15 V, L = 100µH
TO-247AD (IXSH)
ns
900
ns
tc
1200
ns
Eoff
14.5
mJ
0.83 K/W
RthJC
0.25
RthCK
Reverse Diode (FRED)
K/W
Characteristic Values
(TJ = 25ºC unless otherwise specified)
Min.
Typ.
Max.
VF
IF = IC90, VGE = 0V
Pulse test, t< 300 µs, duty cycle < 2%
TJ = 125ºC
trr
IF
= 1A; di/dt = -100A/µs; VR = 30V;
TJ = 25ºC
IRM
IF
= IC90, VGE = 0V, -diF /dt = 240 A/µs
trr
TJ
= 100ºC, VR = 540V
2.3
2.1
V
40
60
ns
16
18
A
300
RthJC
ns
1.0 K/W
Notes:
1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or RG values.
2) Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXYS Semiconductor GmbH
POB 1180; D-68619; Lampertheim, Germany
Tel: +49-6206-5030; Fax: +49-6206-503627