Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 16 A IC90 TC = 90°C 8 A 15 40 A A IF90 ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 PC TC = 25°C 120 W VISOL 50/60 Hz, rms, 1 minute 2500 ~V -55 ... +150 °C ICM = 40 @ 0.8 VCES TJ 150 °C -55 ... +150 °C 22...130/5.30 N/lb Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 Weight 5 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2004 IXYS All rights reserved g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VGE = 0 V = 250 µA, VCE = VGE 1700 3.0 Note 1 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 4.2 4.8 ISOPLUS247 (IXGR) E153432 G G = Gate, E = Emitter C E ISOLATED TAB C = Collector, µs Tstg Mounting force = 1700 V = 16 A = 5.0 V = 40 ns A TJM FC VCES IC25 VCE(sat) tfi(typ) 5.0 V V 100 1.5 µA mA ±100 nA 5.0 V V Features z Electrically isolated tab z International standard package outline z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z UL recognized z Molding epoxies meet UL 94 V-0 flammability classification z SONIC-FRDTM fast recovery copack diode Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies DS99232(11/04) IXGR Symbol Test Conditions gfs IC = IC25; VCE = 10 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 10 S 1700 pF 125 pF 30 pF 65 nC 13 nC 24 nC 36 ns Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC25, VGE = 15 V td(off) RG = 10 Ω, VCE = 0.5 VCES Note 3 tfi 57 350 ns 40 150 ns 0.9 1.5 mJ td(on) Inductive load, TJ = 125°°C 38 ns tri IC = IC25, VGE = 15 V 59 ns Eon td(off) RG = 10 Ω, VCE = 0.5 VCES Note 3 1.5 200 mJ ns tfi 55 ns Eoff 1.1 mJ 0.15 1.04 K/W K/W RthJC RthCK Reverse Diode (FRED) ISOPLUS247 Outline ns 200 Eoff 16N170AH1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 20A, VGE = 0 V, Note 2 IRM t rr IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs VR = 600 V 2.7 50 150 RthJC V A ns 1.5 K/W Notes: 1. 2. 3. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692