Datasheet

Advance Technical Information
IXGX 32N170H1
High Voltage
IGBT with Diode
VCES
IC25
VCE(sat)
tfi(typ)
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC90
TC = 90°C
32
A
ICM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5Ω
Clamped inductive load
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
10
PC
TC = 25°C
350
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
22...130/5...30
N/lb
ICM = 90
@ 0.8 VCES
TJ
FC
Mounting force with chip
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
°C
6
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
© 2003 IXYS All rights reserved
G
(TAB)
C
G = Gate,
E = Emitter,
E
C = Collector,
TAB = Collector
g
Features
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 1mA, VGE = 0 V
= 250 µA, VCE = VGE
= IC90, VGE = 15 V
PLUS247 (IXGX)
A
µs
300
= 1700 V
=
75 A
= 3.3 V
= 290 ns
1700
3.0
Note 1
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
2.5
3.0
5.0
V
V
500
8
µA
mA
±100
nA
3.3
V
V
DS99071(07/03)
IXGX
Symbol
Test Conditions
gfs
IC = IC25; VCE = 10 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
25
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
33
S
3500
pF
250
pF
40
pF
155
nC
30
nC
51
nC
45
ns
Cres
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
tri
IC = IC90, VGE = 15 V
td(off)
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
tfi
38
500
ns
250
500
ns
15
25 mJ
td(on)
Inductive load, TJ = 125°°C
48
ns
tri
IC = IC90, VGE = 15 V
42
ns
Eon
td(off)
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
6.0
360
mJ
ns
tfi
560
ns
Eoff
22
mJ
0.15
0.35 K/W
K/W
RthJC
RthCK
Reverse Diode (FRED) (Note 4)
PLUS247 Outline (IXGX)
ns
270
Eoff
32N170H1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 70A, VGE = 0 V, Pulse test,
t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
t rr
IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs
VR = 600 V
2.7
50
150
RthJC
V
A
ns
0.4 K/W
Notes: 1.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3.
Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
4.
See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343