Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 26 A IC90 TC = 90°C 17 A IF90 ICM TC = 25°C, 1 ms 14 200 A A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 PC TC = 25°C 200 W -55 ... +150 °C ICM = 70 @ 0.8 VCES TJ µs 150 °C Tstg -55 ... +150 °C 22...130/5...30 N/lb 2500 ~V Mounting force with clamp VISOL 50/60 Hz, 1 minute Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 Weight 5 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 2004 IXYS All rights reserved g Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. = 1mA, VGE = 0 V = 250 µA, VCE = VGE 1700 3.0 Note 1 TJ = 125°C TJ = 125°C 4.2 4.8 = 1700 V = 26 A = 5.2 V = 50 ns ISOPLUS247 (IXGR) E153432 G G = Gate, E = Emitter C E ISOLATED TAB C = Collector, A TJM FC VCES IC25 VCE(sat) tfi(typ) 5.0 V V 500 8 µA mA ±100 nA 5.2 V V Features z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies DS99233(11/04) IXGR Symbol Test Conditions gfs IC = IC25; VCE = 10 V Note 2 Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 25 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 33 S 3700 pF 180 pF 44 pF 155 nC 30 nC 51 nC 46 ns Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°°C tri IC = IC90, VGE = 15 V td(off) RG = 2.7 Ω, VCE = 0.8 VCES Note 3 tfi 57 500 ns 50 100 ns 1.5 3.0 mJ td(on) Inductive load, TJ = 125°°C 48 ns tri IC = IC90, VGE = 15 V 42 ns Eon RG = 2.7 Ω, VCE = 0.8 VCES Note 3 2.5 mJ 300 ns tfi 70 ns Eoff 2.4 mJ 0.15 0.65 K/W K/W td(off) RthJC RthCK Reverse Diode (FRED) ISOPLUS247 Outline ns 270 Eoff See IXGX32N170AH1 for charcteristic curves Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 20A, VGE = 0 V, Note 2 IRM t rr IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs VR = 600 V 2.7 V 50 150 RthJC A ns 1.5 K/W Notes: 1. 2. 3. 4. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. See DH60-18A and IXGH32N170A datasheets for additional characteristics IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 32N170AH1 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692