IXYS 89358

Advance Technical Information
IXGR 32N170AH1
High Voltage
IGBT with Diode
Electrically Isolated Tab
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
26
A
IC90
TC = 90°C
17
A
IF90
ICM
TC = 25°C, 1 ms
14
200
A
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5Ω
Clamped inductive load
tSC
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω
10
PC
TC = 25°C
200
W
-55 ... +150
°C
ICM = 70
@ 0.8 VCES
TJ
µs
150
°C
Tstg
-55 ... +150
°C
22...130/5...30
N/lb
2500
~V
Mounting force with clamp
VISOL
50/60 Hz, 1 minute
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
Weight
5
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 2004 IXYS All rights reserved
g
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
= 1mA, VGE = 0 V
= 250 µA, VCE = VGE
1700
3.0
Note 1
TJ = 125°C
TJ = 125°C
4.2
4.8
= 1700 V
=
26 A
= 5.2 V
=
50 ns
ISOPLUS247 (IXGR)
E153432
G
G = Gate,
E = Emitter
C
E
ISOLATED TAB
C = Collector,
A
TJM
FC
VCES
IC25
VCE(sat)
tfi(typ)
5.0
V
V
500
8
µA
mA
±100
nA
5.2
V
V
Features
z
Electrically Isolated tab
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
DS99233(11/04)
IXGR
Symbol
Test Conditions
gfs
IC = IC25; VCE = 10 V
Note 2
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
25
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
33
S
3700
pF
180
pF
44
pF
155
nC
30
nC
51
nC
46
ns
Cres
Qg
Qge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°°C
tri
IC = IC90, VGE = 15 V
td(off)
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
tfi
57
500
ns
50
100
ns
1.5
3.0 mJ
td(on)
Inductive load, TJ = 125°°C
48
ns
tri
IC = IC90, VGE = 15 V
42
ns
Eon
RG = 2.7 Ω, VCE = 0.8 VCES
Note 3
2.5
mJ
300
ns
tfi
70
ns
Eoff
2.4
mJ
0.15
0.65 K/W
K/W
td(off)
RthJC
RthCK
Reverse Diode (FRED)
ISOPLUS247 Outline
ns
270
Eoff
See IXGX32N170AH1 for
charcteristic curves
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 20A, VGE = 0 V, Note 2
IRM
t rr
IF = 50A, VGE = 0 V, -diF/dt = 800 A/µs
VR = 600 V
2.7
V
50
150
RthJC
A
ns
1.5 K/W
Notes: 1.
2.
3.
4.
Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
See DH60-18A and IXGH32N170A datasheets for additional
characteristics
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
32N170AH1
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692