Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES I C25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C 75 A I C90 T C = 90°C 40 A I CM T C = 25°C, 1 ms 150 A SSOA (RBSOA) V GE = 15 V, TJ = 125°C, RG = 2.7 Ω Clamped inductive load, L = 30 µH ICM = 80 @ 0.8 VCES A tSC (SCSOA) V GE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC T C = 25°C G C E TO-204 AE (IXSM) C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md TO-247 AD (IXSH) Mounting torque 1.13/10 Nm/lb.in. G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz ● ● Weight TO-204 = 18 g, TO-247 = 6g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 ● ● ● Symbol Test Conditions BVCES IC = 250 µA, VGE = 0 V VGE(th) IC = 4 mA, VCE = VGE I CES V CE = 0.8 • VCES V GE = 0 V I GES V CE = 0 V, VGE = ±20 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C ● V 7 V 50 1 µA mA ±100 nA Applications AC motor speed control Uninterruptible power supplies (UPS) Welding ● ● ● Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density ● VCE(sat) IC = IC90, VGE = 15 V 40N60 40N60A © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS reserves the right to change limits, test conditions and dimensions. 2.5 3.0 V V ● 91546F (4/96) IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % I C(on) VGE = 15 V, VCE = 10 V Cies 23 S 200 A 4500 pF 350 pF C res 90 pF Qg 190 260 nC 45 60 nC 88 120 nC C oes Q ge VCE = 25 V, VGE = 0 V, f = 1 MHz 16 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Q gc td(on) tri td(off) tfi Eoff td(on) tri Eon Inductive load, TJ = 25°°C 55 ns IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 Ω 170 ns 400 ns Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 40N60 40N60A 400 200 ns ns 40N60 40N60A 5.0 2.5 mJ mJ 55 ns Inductive load, TJ = 125°° C td(off) IC = IC90, VGE = 15 V, L = 100 µH tfi VCE = 0.8 VCES, RG = 2.7 Ω Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased R G 170 ns 1.7 mJ 40N60 40N60A 340 1000 525 ns ns 40N60 40N60A 600 340 1500 700 ns ns 40N60 40N60A 12 6 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-204AE Outline mJ mJ 0.42 K/W RthJC RthCK TO-247 AD Outline 0.25 K/W 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A Fig. 1 Saturation Characteristics 80 T J = 25°C Fig. 2 200 13V VGE = 15V VGE = 15V 160 60 11V 50 IC - Amperes IC - Amperes T J = 25°C 180 70 Output Characterstics 40 30 20 9V 140 13V 120 100 80 11V 60 40 10 9V 20 7V 7V 0 0 0 1 2 3 4 5 0 2 4 6 VCE - Volts 10 Fig. 4 VCE(sat) - Normalized 8 7 VCE - Volts VGE=15V 1.4 6 IC = 80A 4 IC = 40A 3 2 IC = 20A 1 9 10 IC = 80A 1.3 1.2 1.1 IC = 40A 1.0 0.9 IC = 20A 0.8 0 8 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and 1.3 80 VCE = 10V Threshold Voltage BV / V GE(th) - Normalized 70 IC - Amperes 60 50 40 TJ = 25°C 30 T J = 125°C 20 T J = - 40°C 10 0 4 5 6 7 8 9 18 20 Temperature Dependence of Output Saturation Voltage 1.5 J 5 10 12 14 16 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage T = 25°C 9 8 10 VGE - Volts 11 12 13 BV CES 1.2 IC = 3mA 1.1 1.0 0.9 V GE8th) 0.8 0.7 -50 IC = 4mA -25 0 25 50 75 100 125 150 TJ - Degrees C © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 40N60 IXSM 40N60 IXSH 40N60A IXSM 40N60A 1000 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 12 1000 RG = 10Ω hi-speed 500 6 tfi (-A) hi-speed 250 tfi - nanoseconds 9 Eoff (-A) 3 0 10 20 30 40 50 60 70 8 Eoff (-A), hi-speed 600 6 400 4 tfi (-A), hi-speed 200 0 0 IC = 40A 800 Eoff - millijoules Tfi - nanoseconds 750 10 T J = 125°C TJ = 125°C 2 0 80 Eoff - millijoules Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 0 0 10 20 IC - Amperes 30 40 50 RG - Ohms Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 100 15 IC = 40A VCE = 480V T J = 125°C 10 IC - Amperes VGE - Volts 12 9 6 RG = 22Ω dV/dt < 6V/ns 1 0.1 3 0.01 0 0 50 100 150 200 0 250 100 200 Qg- nCoulombs 300 400 500 600 700 VCE - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627