IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE(sat) Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C, limited by leads 75 A I C90 T C = 90°C 50 A I CM T C = 25°C, 1 ms 200 A SSOA (RBSOA) V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH ICM = 100 @ 0.8 VCES A tSC (SCSOA) V GE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC T C = 25°C C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard package JEDEC TO-264 AA Guaranteed Short Circuit SOA capability High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM ● W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md G ● 300 TJ TO-264 AA Mounting torque 0.9/6 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 10 g 300 °C ● ● ● ● ● Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ● ● ● ● BVCES IC = 3 mA, VGE = 0 V 600 VGE(th) IC = 4 mA, VCE = VGE 4 I CES V CE = 0.8 • VCES V GE = 0 V I GES V CE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V V 7 ● V 750 15 µA mA ±100 nA 2.7 V Advantages ● ● ● IXYS reserves the right to change limits, test conditions and dimensions. © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost 92822G (4/96) IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSK 50N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 20 Qg Q ge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Q gc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 23 S 190 250 nC 45 60 nC 88 120 nC 70 ns 220 ns 200 ns 400 TO-264 AA Outline 600 ns 6 mJ 70 ns 230 ns 4.5 mJ 340 ns 400 ns 7 mJ 0.42 K/W RthJC 0.15 RthCK Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 480 A/µs VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C RthJC 19 175 35 1.8 V 33 A ns ns 50 0.75 K/W IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSK 50N60AU1 Fig. 1 Saturation Characteristics 80 TJ = 25°C Fig. 2 200 13V VGE = 15V VGE = 15V 160 60 11V 50 IC - Amperes IC - Amperes TJ = 25°C 180 70 Output Characterstics 40 30 20 9V 3 4 80 11V 60 9V 7V 0 0 2 100 20 7V 1 13V 120 40 10 0 140 5 0 2 4 6 VCE - Volts Fig. 4 VCE(sat) - Normalized 8 VCE - Volts 7 6 5 IC = 80A IC = 40A 3 2 9 10 1.2 1.1 IC = 40A 1.0 0.9 0.8 0 8 IC = 80A 1.3 IC = 20A IC = 20A 1 Temperature Dependence of Output Saturation Voltage VGE=15V 1.4 4 20 1.5 TJ = 25°C 9 10 12 14 16 18 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 8 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 80 VCE = 10V BV / VGE(th) - Normalized 70 IC - Amperes 60 50 40 TJ = 25°C 30 T J = 125°C 20 TJ = - 40°C 10 0 4 5 6 7 8 9 10 VGE - Volts 11 12 13 BV CES 1.2 IC = 3mA 1.1 1.0 0.9 V GE8th) 0.8 0.7 -50 IC = 4mA -25 0 25 50 75 100 125 150 TJ - Degrees C © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSK 50N60AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1000 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 12 1000 10 T J = 125°C IC = 50A T J = 125°C RG = 10Ω 800 500 6 tfi 250 3 0 600 0 0 10 20 30 40 50 60 70 6 tfi 400 4 200 2 0 80 Eoff - millijoules E off 8 Eoff tfi - nanoseconds 9 Eoff - millijoules tfi - nanoseconds 750 0 0 10 20 IC - Amperes 30 40 50 RG - Ohms Fig.9 Gate Charge Characteristic Curve Fig.10 15 Turn-Off Safe Operating Area 1000 IC = 50A V CE = 480V 100 T J = 125°C IC - Amperes VGE - Volts 12 9 6 RG = 22Ω 10 dV/dt < 6V/ns 1 0.1 3 0.01 0 0 50 100 150 200 250 0 100 200 300 400 500 600 700 VCE - Volts Qg - nCoulombs Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 Diode 0.1 IGBT Single Pulse 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSK 50N60AU1 Fig.13 180 20 VFR - Volts Current - Amperes 100 T J = 100°C 80 60 T J = 150°C 40 0 0.5 800 12 600 8 400 4 T J = 25°C 20 VFR IF = 60A 16 120 1000 T J = 125°C 160 140 Peak Forward Voltage VFR and Forward Recovery Time tfr 1.5 2.0 2.5 200 tfr 0 1.0 0 200 400 Voltage Drop - Volts 600 800 1000 tfr - nanoseconds Fig.12 Typical Forward Voltage Drop 0 1200 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr Fig.15 1.4 Reverse Recovery Chargee 5 T J = 100°C V R = 350V Qr - nanocoulombs Normalized IRM / Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 4 I = 60A F 3 2 1 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C Fig.17 80 Reverse Recovery Time 800 TJ = 100°C T J = 100°C VR = 350V V R = 350V IF = 60A trr - nanoseconds IRM - Amperes 1000 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current 60 100 40 max 20 0 IF = 60A 600 400 200 0 200 400 600 diF /dt - A/µs 800 1000 0 200 400 600 diF /dt - A/µs © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627