IGBT High Speed IXSH 50N60B V`bp I`OR V`bEë~íF Maximum Ratings TO-247 AD Short Circuit SOA Capability = 600 V = 75 A = 2.5 V mêÉäáãáå~êó=Ç~í~=ëÜÉÉí Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient IC25 ±30 V TC = 25°C, limited by leads 75 A IC90 TC = 90°C 50 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH ICM = 100 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC TC = 25°C G G = Gate, E = Emitter, W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-247 SMD TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s E C = Collector, TAB = Collector Features 250 TJ `=Eq^_F C 4 6 g g 300 °C International standard package JEDEC TO-247 AD, and TO-247 SMD for surface mount Guaranteed Short Circuit SOA capability High frequency IGBT Latest generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions BVCES IC = 250 µA, VGE = 0 V VGE(th) IC = 4 mA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90; VGE = 15 V «=NVVV=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 V 4 TJ = 25°C TJ = 125°C 2.2 8 V 200 1 µA mA ±100 nA 2.5 V AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density VTROQ_= EQLVVF IXSH 50N60B Symbol Test Conditions gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 VGE = 15 V, VCE = 10 V Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc 23 S ∅m 160 A 3850 pF 440 pF 50 pF 167 nC 45 nC 88 nC td(on) Inductive load, TJ = 25°°C 70 ns tri IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = 2.7 Ω 70 ns td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 2.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 150 300 ns 150 300 ns 3.3 6.0 mJ 70 ns 70 ns 0.6 mJ 230 ns 230 ns 4.8 mJ RthJC RthCK TO-247 AD Outline É aáãK jáääáãÉíÉê jáåK j~ñK ^ QKT RKP OKO OKRQ ^N ^O OKO OKS Ä NKM NKQ ÄN NKSR OKNP ÄO OKUT PKNO ` KQ KU a OMKUM ONKQS b NRKTR NSKOS É RKOM RKTO i NVKUN OMKPO iN QKRM ∅m PKRR PKSR n RKUV SKQM o QKPO RKQV p SKNR _p` fåÅÜÉë jáåK j~ñK KNUR KOMV KMUT KNMO KMRV KMVU KMQM KMRR KMSR KMUQ KNNP KNOP KMNS KMPN KUNV KUQR KSNM KSQM MKOMR MKOOR KTUM KUMM KNTT KNQM KNQQ MKOPO MKORO KNTM KONS OQO _p` 0.5 K/W 0.25 K/W IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR IXSH 50N60B 160 100 VGE = 15V TJ = 25°C TJ = 25°C 13V VGE = 15V 120 IC - Amperes IC - Amperes 80 60 11V 40 13V 80 11V 40 20 9V 9V 7V 0 0 2 4 6 8 0 0 10 4 8 16 20 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 1.6 100 VGE = 15V TJ = 125°C IC = 100A 13V VCE (sat) - Normalized 80 IC - Amperes 12 60 11V 40 9V 20 1.4 VGE = 15V 1.2 1.0 IC = 50A 0.8 IC = 25A 0.6 7V 0.4 25 0 0 2 4 6 8 10 50 75 VCE - Volts 100 125 TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 10000 100 f = 1Mhz VCE = 10V Ciss Capacitance - pF 80 IC - Amperes 150 60 40 TJ = 125°C 1000 Coss 100 20 Crss T J = 25°C 10 0 4 6 8 10 12 VGE - Volts Figure 5. Admittance Curves «=NVVV=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ 14 16 0 5 10 15 20 25 30 VCE-Volts Figure 6. Capacitance Curves 35 40 IXSH 50N60B 3.0 24 TJ = 125°C 12 1.0 8 0.5 4 0.0 20 40 60 E(ON) - millijoules E(OFF) 1.5 15 IC = 100A E(ON) 2 10 E(OFF) IC = 50A E(ON) 1 5 E(OFF) E(ON) IC =25A 0 0 100 80 3 0 E(OFF) - millijoules 16 E(OFF) E(OFF) - milliJoules E(ON) - millijoules 20 2.0 0 20 TJ = 125°C RG = 10Ω 2.5 4 E(ON) 10 20 30 40 50 0 60 RG - Ohms IC - Amperes Figure 7. Dependence of EON and EOFF on IC. Figure 8. Dependence of EON and EOFF on RG. 600 20 IC =50A VCE = 250V 100 IC - Amperes 16 12 8 TJ = 125°C 10 RG = 6.2 Ω dV/dt < 5V/ns 1 4 0.1 0 0 25 50 75 100 125 150 175 0 100 200 300 400 500 600 VCE - Volts Qg - nanocoulombs Figure 10. Turn-off Safe Operating Area Figure 9. Gate Charge ZthJC (K/W) 1 0.1 D=0.5 D=0.2 0.01 D=0.1 D=0.05 D=0.02 D = Duty Cycle D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW QIUPRIRVO QIURMIMTO QIUUNINMS QIVPNIUQQ RIMNTIRMU RIMPQITVS RIMQVIVSN RIMSPIPMT RINUTINNT RIOPTIQUN RIQUSITNR RIPUNIMOR