High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE(SAT) = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C 35 A ICM TC = 25°C, 1 ms 140 A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 70 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 22 W, non repetitive 10 ms PC TC = 25°C IGBT Diode 300 190 TJ -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 6 g TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Weight TO-247 HL W W PLUS TO-247TM (IXSX35N120AU1) C (TAB) G C G = Gate, E = Emitter, E C = Collector, TAB = Collector Features • Hole-less TO-247 package for clip mounting • High frequency IGBT and anti-parallel FRED in one package • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions BVCES IC = 5 mA, VGE = 0 V 1200 VGE(th) IC = 4 mA, VCE = VGE 4 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 8 V 750 15 mA mA ±100 nA 4 V • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages • Space savings (two devices in one package) • Reduces assembly time and cost • High power density 97514D (7/00) 1-5 IXSX 35N120AU1 Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = IC90; VCE = 10 V, 20 26 S 170 A 3900 pF 295 pF C res 60 pF Qg 150 PLUS247TM (IXSX) Pulse test, t £ 300 ms, duty cycle £ 2 % IC(on) VGE = 15 V, VCE = 10 V C ies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) Inductive load, TJ = 25°C t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 190 nC 40 60 nC 70 100 nC 80 ns 150 ns 400 900 ns 500 700 ns 10 mJ 80 ns 150 ns 8 mJ 400 ns 700 ns 15 mJ RthJC Dim. Millimeter Min. Max. A 4.83 5.21 2.29 2.54 A1 A2 1.91 2.16 b 1.14 1.40 b1 1.91 2.13 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 0.42 K/W RthCK 0.15 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 %, TJ = 125°C IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 540 V TJ = 100°C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W 32 225 40 2.35 V 36 A ns ns 60 0.65 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXSX 35N120AU1 Fig.1 Saturation Characteristics 70 VGE =15V TJ = 25°C Fig.2 Output Characterstics 250 13V VGE = 15V TJ = 25°C 11V 60 IC - Amperes IC - Amperes 200 50 40 30 9V 20 13V 150 11V 100 50 10 9V 7V 7V 0 0 0 1 2 3 4 5 0 2 4 6 VCE - Volts Fig.3 Fig.4 Temperature Dependence of Output Saturation Voltage 1.4 TJ = 25°C 9 VGE=15V 1.3 VCE(sat) - Normalized 8 7 VCE - Volts 10 12 14 16 18 20 VCE - Volts Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 8 6 IC = 70A 5 4 IC = 35A 3 IC = 17.5A 2 IC = 70A 1.2 1.1 IC = 35A 1.0 0.9 IC =1 7.5A 0.8 1 0 8 9 10 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts Fig.5 25 50 75 100 125 150 TJ - Degrees C Input Admittance Fig.6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 50 IC - Amperes 40 30 20 TJ = 125°C TJ = 25°C 10 TJ = - 40C 0 4 5 6 7 8 9 10 11 12 13 14 15 VGE - Volts © 2000 IXYS All rights reserved BV / VGE(th) - Normalized VCE = 10V 1.2 VGE(th) IC = 4mA 1.1 1.0 0.9 BVCES IC = 3mA 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-5 IXSX 35N120AU1 1250 Turn-Off Energy per Pulse and Fall Time on Collector Current Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 25 TJ = 125°C 1250 18 TJ = 125°C R G = 10 tfi 750 500 15 10 E off 1000 17 tfi 750 16 500 15 E off 250 0 Eoff - millijoules tfi - nanoseconds 20 tfi - nanoseconds IC = 35A 1000 10 20 30 40 50 60 5 70 250 0 10 20 IC - Amperes Fig.9 15 30 40 14 50 R G - Ohms Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 100 IC = 35A VCE = 500V 12 TJ = 125°C 10 IC - Amperes VGE- Volts Eoff - millijoules Fig.7 9 6 R G = 2.7 dV/dt < 5V/ns 1 0.1 3 0 0.01 0 50 100 150 200 0 200 QG - nanocoulombs 400 600 800 1000 1200 VCE - Volts Fig.11 Transient Thermal Impedance 1 ZthjJC - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-5 IXSX 35N120AU1 Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tFR 60 90 50 70 60 VFR - Volts Current - Amperes 80 1200 TJ = 125°C IF = 60A 50 TJ = 100°C 40 30 TJ = 150°C 20 0 40 800 30 600 20 400 tfr 0 0 1 2 3 0 200 400 Voltage Drop - Volts 12 1.2 10 coulombs 1.0 IRM 0.8 TJ = 100°C VR = 540V 0 1000 0.4 max. IF = 60A 8 typ. IF = 120A IF = 60A IF = 30A 6 m Qr Qr - Normalized IRM / Qr 800 Fig.15 Reverse Recovery Chargee 1.4 0.6 600 200 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr 4 2 0.2 0.0 0 40 80 120 0 10 160 100 TJ - Degrees C 1000 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current Fig.17 Reverse Recovery Time 1.0 80 max. IF = 60A TJ = 100°C VR = 540V TJ = 100°C VR = 540V max. IF = 60A 0.8 typ. IF = 120A IF = 60A IF = 30A 40 20 trr - seconds 60 IRM - Amperes 1000 10 TJ = 25°C 10 VFR tfr - nanoseconds Fig.12 Maximum Forward Voltage Drop m typ. IF = 120A IF = 60A IF = 30A 0.6 0.4 0.2 0 0.0 200 400 600 diF /dt - A/µs © 2000 IXYS All rights reserved 800 1000 0 200 400 600 800 1000 diF /dt - A/µs 5-5