High Voltage IGBT with Diode IXSN 35N120AU1 VCES = 1200 V = 70 A = 4V IC25 VCE(sat) 3 2 4 1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 70 A IC90 TC = 90°C 35 A ICM TC = 25°C, 1 ms 140 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH ICM = 70 @ 0.8 VCES A Either Emitter terminal can be used as Main or Kelvin Emitter tSC (SCSOA) VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C RG = 22 W, non repetitive 10 ms Features PC PD TC = 25°C IGBT Diode VISOL 50/60 Hz IISOL £ 1 mA t = 1 min t=1s W W 2500 3000 V~ V~ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md 2 4 3 1 = Emitter , 2 = Gate, ● ● ● ● ● Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 1 ● 300 175 TJ miniBLOC, SOT-227 B 30 Test Conditions g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ● BVCES IC = 5 mA, VGE = 0 V 1200 IC = 4 mA, VCE = VGE 4 ICESÿ VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC V 8 V ● ● ● ● TJ = 25°C TJ = 125°C = IC90, VGE = 15 V 750 15 mA mA ±100 nA 4 V International standard package miniBLOC (ISOTOP) compatible Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ Low VCE(sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short trr and IRM Low collector-to-case capacitance (< 50 pF) - reducesd RFI Low package inductance (< 10 nH) - easy to drive and to protect Applications ● VGE(th) 3 = Collector 4 = Emitter AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages ● ● ● Space savings Easy to mount with 2 screws High power density Device must be heat sunk during high temperature leackage test to avoid thermal runaway. IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 92519E (12/96) 1-4 IXSN35N120AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IC(on) VCE = 10 V, VGE = 15 V 20 C ies S 170 A 3900 pF 295 pF C res 60 pF Qg 150 190 nC Dim. 40 60 nC 70 100 nC A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 26 miniBLOC, SOT-227 B IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc M4 screws (4x) supplied Millimeter Min. Max. Inches Min. Max. td(on) Inductive load, TJ = 25°C 80 ns 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 t ri IC = IC90, VGE = 15 V, VCE = 0.8 • VCES, RG = 2.7 W E F 150 ns G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 td(off) tfi Eoff td(on) t ri td(off) tfi Eon Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, VCE = 0.8 • VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 400 900 ns 500 700 ns 10 mJ 80 ns 150 ns 400 ns 700 ns 6 mJ 15 mJ RthJC 0.42 K/W RthCK 0.05 Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 540 V TJ = 100°C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C RthJC © 2000 IXYS All rights reserved K/W 32 225 40 2.35 V 35 A ns ns 60 0.71 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXSN35N120AU1 Fig. 1 Saturation Characteristics 70 VGE =15V TJ = 25°C Fig. 2 Output Characterstics 250 13V 60 VGE = 15V TJ = 25°C 11V IC - Amperes IC - Amperes 200 50 40 30 9V 20 13V 150 11V 100 50 10 9V 7V 7V 0 0 0 1 2 3 4 5 0 2 4 6 VCE - Volts Fig. 4 Temperature Dependence of Output Saturation Voltage 1.4 TJ = 25°C 9 VGE=15V 1.3 VCE(sat) - Normalized 8 7 VCE - Volts 10 12 14 16 18 20 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 8 6 IC = 70A 5 4 IC = 35A 3 IC = 17.5A 2 IC = 70A 1.2 1.1 IC = 35A 1.0 0.9 IC =1 7.5A 0.8 1 0 8 9 10 11 12 13 14 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.3 50 IC - Amperes 40 30 20 TJ = 125°C TJ = 25°C 10 TJ = - 40C 0 4 5 6 7 8 9 10 11 12 13 14 15 VGE - Volts © 2000 IXYS All rights reserved BV / VGE(th) - Normalized VCE = 10V 1.2 VGE(th) IC = 4mA 1.1 1.0 0.9 BVCES IC = 3mA 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXSN35N120AU1 Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 25 TJ = 125°C 1250 18 TJ = 125°C RG = 10W tfi 750 500 15 10 Eoff 1000 17 tfi 750 16 500 15 Eoff 250 0 Eoff - millijoules tfi - nanoseconds 20 tfi - nanoseconds IC = 35A 1000 10 20 30 40 50 60 5 70 250 0 10 20 Fig.9 Gate Charge Characteristic Curve 14 50 40 Fig.10 Turn-Off Safe Operating Area 100 IC = 35A VCE = 500V 12 TJ = 125°C 10 IC - Amperes VGE- Volts 30 RG - Ohms IC - Amperes 15 Eoff - millijoules 1250 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 9 6 RG = 2.7W dV/dt < 5V/ns 1 0.1 3 0 0.01 0 50 100 150 200 0 200 QG - nanocoulombs 400 600 800 1000 1200 VCE - Volts Fig.11 Transient Thermal Impedance 1 ZthjJC - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4