IXYS IXSN35N120AU1

High Voltage
IGBT with Diode
IXSN 35N120AU1 VCES
= 1200 V
= 70 A
= 4V
IC25
VCE(sat)
3
2
4
1
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
1200
A
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
70
A
IC90
TC = 90°C
35
A
ICM
TC = 25°C, 1 ms
140
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
ICM = 70
@ 0.8 VCES
A
 Either Emitter terminal can be used as
Main or Kelvin Emitter
tSC
(SCSOA)
VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
10
ms
Features
PC
PD
TC = 25°C
IGBT
Diode
VISOL
50/60 Hz
IISOL £ 1 mA
t = 1 min
t=1s
W
W
2500
3000
V~
V~
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Md
2
4
3
1 = Emitter ,
2 = Gate,
●
●
●
●
●
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
Symbol
1
●
300
175
TJ
miniBLOC, SOT-227 B
30
Test Conditions
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
●
BVCES
IC
= 5 mA, VGE = 0 V
1200
IC
= 4 mA, VCE = VGE
4
ICESÿ 
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
V
8
V
●
●
●
●
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V
750
15
mA
mA
±100
nA
4
V
International standard package
miniBLOC (ISOTOP) compatible
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Low VCE(sat)
- for minimum on-state conduction
losses
Fast Recovery Epitaxial Diode
- short trr and IRM
Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
●
VGE(th)
3 = Collector
4 = Emitter 
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
●
●
●
Space savings
Easy to mount with 2 screws
High power density
‚ Device must be heat sunk during high temperature leackage test to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92519E (12/96)
1-4
IXSN35N120AU1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IC(on)
VCE = 10 V, VGE = 15 V
20
C ies
S
170
A
3900
pF
295
pF
C res
60
pF
Qg
150
190
nC
Dim.
40
60
nC
70
100
nC
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
26
miniBLOC, SOT-227 B
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
M4 screws (4x) supplied
Millimeter
Min.
Max.
Inches
Min.
Max.
td(on)
Inductive load, TJ = 25°C
80
ns
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
t ri
IC = IC90, VGE = 15 V,
VCE = 0.8 • VCES, RG = 2.7 W
E
F
150
ns
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
td(off)
tfi
Eoff
td(on)
t ri
td(off)
tfi
Eon
Eoff
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V,
VCE = 0.8 • VCES, RG = 2.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
400
900
ns
500
700
ns
10
mJ
80
ns
150
ns
400
ns
700
ns
6
mJ
15
mJ
RthJC
0.42 K/W
RthCK
0.05
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = IC90, VGE = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
t rr
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms
VR = 540 V
TJ = 100°C
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C
RthJC
© 2000 IXYS All rights reserved
K/W
32
225
40
2.35
V
35
A
ns
ns
60
0.71 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXSN35N120AU1
Fig. 1 Saturation Characteristics
70
VGE =15V
TJ = 25°C
Fig. 2 Output Characterstics
250
13V
60
VGE = 15V
TJ = 25°C
11V
IC - Amperes
IC - Amperes
200
50
40
30
9V
20
13V
150
11V
100
50
10
9V
7V
7V
0
0
0
1
2
3
4
5
0
2
4
6
VCE - Volts
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.4
TJ = 25°C
9
VGE=15V
1.3
VCE(sat) - Normalized
8
7
VCE - Volts
10 12 14 16 18 20
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
8
6
IC = 70A
5
4
IC = 35A
3
IC = 17.5A
2
IC = 70A
1.2
1.1
IC = 35A
1.0
0.9
IC =1 7.5A
0.8
1
0
8
9
10
11
12
13
14
0.7
-50
15
-25
0
VGE - Volts
25
50
75
100 125 150
TJ - Degrees C
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.3
50
IC - Amperes
40
30
20
TJ = 125°C
TJ = 25°C
10
TJ = - 40C
0
4
5
6
7
8
9
10 11 12 13 14 15
VGE - Volts
© 2000 IXYS All rights reserved
BV / VGE(th) - Normalized
VCE = 10V
1.2
VGE(th)
IC = 4mA
1.1
1.0
0.9
BVCES
IC = 3mA
0.8
0.7
-50
-25
0
25
50
75
100 125 150
TJ - Degrees C
3-4
IXSN35N120AU1
Fig.7 Turn-Off Energy per Pulse and
Fall Time on Collector Current
25
TJ = 125°C
1250
18
TJ = 125°C
RG = 10W
tfi
750
500
15
10
Eoff
1000
17
tfi
750
16
500
15
Eoff
250
0
Eoff - millijoules
tfi - nanoseconds
20
tfi - nanoseconds
IC = 35A
1000
10
20
30
40
50
60
5
70
250
0
10
20
Fig.9 Gate Charge Characteristic Curve
14
50
40
Fig.10 Turn-Off Safe Operating Area
100
IC = 35A
VCE = 500V
12
TJ = 125°C
10
IC - Amperes
VGE- Volts
30
RG - Ohms
IC - Amperes
15
Eoff - millijoules
1250
Fig.8 Dependence of Turn-Off Energy
Per Pulse and Fall Time on RG
9
6
RG = 2.7W
dV/dt < 5V/ns
1
0.1
3
0
0.01
0
50
100
150
200
0
200
QG - nanocoulombs
400
600
800
1000
1200
VCE - Volts
Fig.11 Transient Thermal Impedance
1
ZthjJC - K/W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4