Advance Technical Information IXTK 62N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 62 A Ω = 35 mΩ RDS(on) N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 62 248 62 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC 390 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 Nm/lb.in. 10 g TO-264 AA (IXTK) D (TAB) G D S G = Gate S = Source D = Drain Tab = Drain Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS V GS = 0 V, ID = 1 mA VGS(th) V DS = VGS, ID = 250 µA IGSS V GS = ±20 V DC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2002 IXYS All rights reserved 250 2.0 TJ = 25°C TJ = 125°C V • • • Motor controls DC choppers Switched-mode power supplies Advantages 4.0 V ±100 nA • 50 µA 2 mA • • Easy to mount with one screw (isolated mounting screw hole) Space savings High power density 35 mΩ 98877A (02/02) IXTK 62N25 Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Characteristic values Min. Typ. Max. V DS = 10 V; ID = 0.5 ID25, pulse test Ciss 50 S 6600 pF 1125 pF Crss 270 pF td(on) 30 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 35 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1.5 Ω (External) 25 ns 115 ns 15 ns tf Qg(on) Qgs 240 nC 55 nC 85 nC VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.30 K/W RthJC 0.15 RthCK Source-Drain Diode K/W TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = 30A, -di/dt = 100 A/µs, VR = 100V 62 A 248 A 1.5 V 360 ns 6 µC Qrr IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1