IXYS IRFP360

MegaMOSTMFET
IRFP 360
VDSS = 400 V
= 23 A
ID25
RDS(on) = 0.20 Ω
N-Channel Enhancement Mode
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
400
400
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID100
IDM
IAR
TC = 25°C
TC = 100°C
TC = 25°C, pulse width limited by TJM
23
14
92
23
A
A
A
A
EAR
TC = 25°C
30
mJ
dv/dt
IS ≤ IDM, di/dt
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10
Nm/lb.in.
6
g
300
°C
TJ
TJM
T stg
Md
Mounting torque
Weight
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
•
•
•
•
•
Fast switching times
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
High commuting dv/dt rating
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
400
VGS(th)
VDS = VGS, ID = 250 µA
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
V
4
V
±100
nA
25
250
µA
µA
0.20
Ω
•
•
•
•
Advantages
•
R DS(on)
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 14A
DC choppers
Motor Controls
Switch-mode and resonant-mode
Uninterruptable power supplies (UPS)
•
•
Space savings
High power density
Easy to mount with 1 screw (isolated
mounting screw hole)
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2%
This data reflects the objective technical specification and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95509A (4/95)
1-2
IRFP 360
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 14 A, pulse test
Ciss
C oss
C rss
VGS = 0 V, VDS = 25 V, f = 1 MHz
t d(on)
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
tr
td(off)
RG = 4.3 Ω (External)
tf
Q g(on)
Q gs
14
TO-247 AD Outline
S
4500
pF
1100
490
pF
pF
24
ns
33
100
ns
ns
30
ns
1
2
Terminals: 1 - Gate
3 - Source
3
2 - Drain
Tab - Drain
Dim.
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
Q gd
210
30
nC
nC
110
nC
0.45
R thJC
0.25
R thCK
Source-Drain Diode
K/W
K/W
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS= 0
23
A
ISM
Repetitive; pulse width limited by TJM
92
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.8
V
t rr
IF = IS, -di/dt = 100 A/µs
420
630
ns
5.6
8.4
µC
Q rr
© 2000 IXYS All rights reserved
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185 .209
A1
2.2
2.54
.087 .102
A2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b1
1.65
2.13
.065 .084
b2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅ P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
S
6.15 BSC
242 BSC
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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