IXYS IXTQ82N25P

IXTQ 82N25P
IXTT 82N25P
IXTK 82N25P
PolarHTTM
Power MOSFET
VDSS
ID25
= 250 V
= 82
A
Ω
= 35 mΩ
RDS(on)
N-Channel Enhancement Mode
Preliminary Data Sheet
TO-264 (IXTK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGSM
250
250
V
V
±20
V
82
75
A
A
250
A
ID25
ID(RMS)
TC = 25°C
External lead current limit
IDM
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
60
A
EAR
TC = 25°C
40
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
10
V/ns
PD
TC = 25°C
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-3P
TO-264
TO-268
1.13/10 Nm/lb.in.
5.5
10
5.0
g
g
g
G
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
250
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
(TAB)
S
TO-3P (IXTQ)
G
D
(TAB)
S
TO-268 (IXTT)
G
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
Features
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
D
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
5.0
V
±100
nA
25
250
µA
µA
35
mΩ
Advantages
z
z
z
Easy to mount
Space savings
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99121B(04/04)
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
30
52
S
4800
pF
900
pF
C rss
210
pF
td(on)
29
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
20
ns
td(off)
RG = 4 Ω (External)
78
ns
22
ns
142
nC
32
nC
74
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCH
0.25 K/W
TO-3P
TO-264
Source-Drain Diode
0.21
0.15
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
82
A
ISM
Repetitive
250
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
QRM
TO-3P Outline
200
ns
2.0
µC
TO-268 Outline
TO-264 AA Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Fig. 2. Extended Output Characteristics
@ 25ºC
Fig. 1. Output Characteristics
@ 25ºC
200
90
VGS = 10V
9V
8V
80
9V
160
140
60
ID - Amperes
ID - Amperes
70
VGS = 10V
180
50
40
7V
30
8V
120
100
80
7V
60
20
40
6V
10
6V
20
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
2
4
6
Fig. 3. Output Characteristics
@ 125ºC
12
14
16
18
20
2.6
VGS = 10V
9V
8V
70
2.2
60
50
7V
40
30
VGS = 10V
2.4
RDS(on) - Normalized
80
ID - Amperes
10
Fig. 4. RDS(on) Norm alized to ID25 Value
vs. Junction Tem perature
90
6V
20
2
1.8
I D = 82A
1.6
1.4
I D = 41A
1.2
1
0.8
10
0.6
5V
0
0.4
0
1
2
3
4
5
V DS - Volts
6
7
-50
8
ID25 Value vs. ID
3.7
0
25
50
75
100
125
150
Fig. 6. Drain Current vs. Case
Tem perature
90
VGS = 10V
3.4
-25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
80
3.1
70
2.8
2.5
TJ = 125ºC
2.2
1.9
1.6
ID - Amperes
RDS(on) - Normalized
8
V DS - Volts
V DS - Volts
60
50
40
30
20
1.3
TJ = 25ºC
1
0.7
10
0
0
20
40
60
80
100 120 140 160 180 200
ID - Amperes
© 2004 IXYS All rights reserved
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
80
100
90
70
80
gfs - Siemens
70
ID - Amperes
TJ = -40ºC
25ºC
125ºC
60
60
50
40
TJ = 125ºC
25ºC
-40ºC
30
20
50
40
30
20
10
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
20
40
60
V GS - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
100
120
140
160
180
Fig. 10. Gate Charge
240
10
VDS = 125V
9
200
I D = 41A
8
I G = 10mA
7
160
VG S - Volts
IS - Amperes
80
ID - Amperes
120
80
6
5
4
TJ = 125ºC
3
2
TJ = 25ºC
40
1
0
0
0.3
0.5
0.7
0.9
V SD - Volts
1.1
1.3
1.5
0
15
30
45
60
75
90
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
1000
10000
f = 1MHz
TJ = 150ºC
R DS(on) Limit
C iss
ID - Amperes
Capacitance - pF
105 120 135 150
QG - nanoCoulombs
1000
TC = 25ºC
100µs
100
1ms
10ms
10
C oss
25µs
DC
C rss
100
1
0
5
10
15
20
25
V DS - Volts
30
35
10
40
100
V DS - Volts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXTK 82N25P IXTQ 82N25P
IXTT 82N25P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
R(th)JC - (ºC/W)
1.00
0.10
0.01
1
10
1 00
Puls e W idth - millis ec onds
© 2004 IXYS All rights reserved
1000