IXYS IXTK180N15P

PolarHTTM
Power MOSFET
IXTK 180N15P
VDSS = 150 V
ID25 = 180 A
RDS(on) ≤ 10 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
100
100
V
V
VDSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25° C
180
A
ID(RMS)
External lead current limit
75
A
IDM
TC = 25° C, pulse width limited by TJM
380
A
IAR
TC = 25° C
60
A
EAR
TC = 25° C
100
mJ
EAS
TC = 25° C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
10
V/ns
PD
TC = 25° C
800
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
10
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
150
VGS(th)
VDS = VGS, ID = 500µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
g
Characteristic Values
Min. Typ.
Max.
TJ = 150° C
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
TJ
TJM
Tstg
TL
TSOLD
TO-264 (IXTK)
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
5.0
V
±200
nA
25
250
µA
µA
10
mΩ
DS99297E(12/05)
IXTK 180N15P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
55
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
86
S
7000
pF
2250
pF
515
pF
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
30
ns
32
ns
150
ns
36
ns
240
nC
55
nC
140
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
TO-264 (IXTK) Outline
0.18° C/W
RthJC
RthCS
° C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
180
A
ISM
Repetitive
380
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
150
2.3
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
ns
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTK 180N15P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
320
180
VGS = 10V
160
140
9V
240
120
8V
I D - Amperes
I D - Amperes
VGS = 10V
280
9V
100
80
7V
60
200
8V
160
120
7V
80
40
40
6
20
0
6V
0
0
0.4
0.8
1.2
1.6
0
2
1
2
3
Fig. 3. Output Characteristics
@ 150ºC
180
2.6
7
8
9
10
VGS = 10V
2.4
R D S ( o n ) - Normalized
I D - Amperes
6
2.8
140
8
120
100
80
7V
60
6V
40
2.2
2
I D = 180A
1.8
1.6
I D = 90A
1.4
1.2
1
20
0.8
5V
0
0.6
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
V D S - Volts
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
Fig. 6. Drain Current vs. Case
Tem perature
3.4
90
3.1
2.8
70
2.5
2.2
VGS = 10V
1.9
VGS = 15V
1.6
TJ = 25ºC
1.3
External Lead Current Limit
80
TJ = 175ºC
I D - Amperes
R D S ( o n ) - Normalized
5
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
VGS = 10V
9V
160
4
V D S - Volts
V D S - Volts
60
50
40
30
20
10
1
0
0.7
0
50
100
150
200
I D - Amperes
© 2005 IXYS All rights reserved
250
300
350
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXTK 180N15P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
250
120
225
200
25ºC
150ºC
g f s - Siemens
175
I D - Amperes
TJ = -40ºC
100
150
125
100
TJ = 150ºC
75
25ºC
50
60
40
20
-40ºC
25
80
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
0
25
50
75
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
350
9
300
VDS = 75V
I D = 90A
8
250
I G = 10mA
7
VG S - Volts
I S - Amperes
100 125 150 175 200 225 250
I D - Amperes
200
150
TJ = 150ºC
100
6
5
4
3
2
TJ = 25ºC
50
1
0
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
V S D - Volts
25
50
75
100 125 150 175 200 225 250
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
100,000
1000
R DS(on) Limit
Cis
10,000
I D - Amperes
Capacitance - picoFarads
f = 1MHz
Cos
25µs
100µs
100
1ms
1,000
Crs
10ms
TJ = 175ºC
DC
TC = 25ºC
10
100
0
5
10
15
20
25
V DS - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
V D S - Volts
1000
IXTK 180N15P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
R( t h ) J C - ºC / W
1.00
0.10
0.01
0.00
0.1
1
10
Pu ls e W id th - m illis e c o n d s
© 2005 IXYS All rights reserved
100
1000