SDD70 Diode-Diode Modules Dimensions in mm (1mm=0.0394") Type SDD70N08 SDD70N12 SDD70N14 SDD70N16 SDD70N18 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=100oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 150 70 A IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1400 1650 1200 1400 A i2dt TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 9800 11300 7200 8100 A2s -40...+150 150 -40...+125 TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s Mounting torque (M5) Terminal connection torque (M5) Typical including screws o C 3000 3600 V~ 2.5-4/22-35 2.5-4/22-35 Nm/lb.in. 90 g SDD70 Diode-Diode Modules Symbol IR Test Conditions TVJ=TVJM; VR=VRRM o Characteristic Values Unit 10 mA VF IF=200A; TVJ=25 C 1.48 V VTO For power-loss calculations only 0.8 V rT QS 3 TVJ=TVJM o TVJ=125 C; IF=50A; -di/dt=3A/us IRM m 100 uC 24 A RthJC per diode; DC current per module 0.51 0.255 K/W RthJK per diode; DC current per module 0.71 0.355 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD70 Diode-Diode Modules Fig. 2 i2dt versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD70 SDD70 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x SDD70 Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.51 0.53 0.55 0.58 0.62 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.013 0.055 0.442 0.0015 0.045 0.485 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.71 0.73 0.75 0.78 0.82 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) ti (s) 0.013 0.055 0.442 0.2 0.0015 0.045 0.485 1.25