2N3055(NPN) RoHS MJ2955(PNP) RoHS SEMICONDUCTOR Nell High Power Products Complementary Silicon power transistors (15A / 60V / 115W) 13.10 Max. 26.00 Max. 8.60 10.90 1.60 Φ20.00 Max. 1 16.85 2 TO-3 30.00 1 38.50 Φ1.00 TAB 2 FEATURES 2- Φ 4.0 Thru. Designed for general designed for general-purpose switching and amplifier applications. DC current gain-hFE = 20-70 @ lC = 4 Adc Collector-Emitter saturation voltageVCE(sat) = 1.1 Vdc (Max) @ lC = 4 Adc Excellent safe operating area All dimensions in millimeters INTERNAL SCHEMATIC DIAGRAM DESCRIPTION C (TAB) The 2N3055 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. (1) B (1) B lt is intended for power switching circuits, series and shunt regulators, output stages and fidelity amplifiers. C (TAB) (2) (2) E E 2N3055(NPN) The complementary PNP type is MJ2955. MJ2955(PNP) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL VALUE VCBO Collector to base voltage (I E = 0) V CER Collector to emitter voltage (R BE = 100Ω) 70 V CEO Collector to emitter voltage (I B = 0) 60 V EBO Emitter to base voltage UNIT 100 V IC Collector current IB Base current 7 15 A 7 T C = 25°C Total power dissipation 115 W 0.657 W/ºC PD Derate above 25ºC Tj Junction temperature 200 T stg Storage temperature -65 to 200 ºC *For PNP types voltage and current values are negative. THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL Rth(j-c) www.nellsemi.com PARAMETER Thermal resistance, junction to case Page 1 of 4 VALUE UNIT 1.50 ºC/W 2N3055(NPN) RoHS MJ2955(PNP) RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) ICEX CONDITIONS PARAMETER SYMBOL MIN MAX V CE = 100V, V BE = -1.5V 1.0 V CE = 100V, V BE = -1.5V, T C = 150°C 5.0 mA Collector cutoff current ICEO Collector cutoff current V CE = 30V, l B = 0 0.7 I EBO Emitter cutoff current V EBO = 7V, l C = 0 5.0 V CEO (SUS) * Collector to emitter sustaining voltage l C = 200mA, l B = 0 60 V CER(SUS) * Collector to emitter sustaining voltage l C = 200mA, R BE = 100Ω 70 V CBO Collector to base voltage lE = 0 100 V EBO Emitter to base voltage lC = 0 7 mA V l C = 4A , V CE = 4V h FE 20 l C = 10A , V CE = 4V V CE(sat) * V BE(on) * fT l s/b * 70 Forward current transfer ratio (DC current gain) 5 l C = 4A, l B = 400mA 1.1 l C = 10A, l B = 3.3A 3.0 Base to emitter on voltage V CE = 4V 1.5 Transition frequency l C = 0.5A, V CE = 10V, f = 1.0MH Z Second breakdown collector current with base forward baised V CE = 40V, t = 1.0s Collector to emitter saturation voltage V *Pulsed : Pulse duration = 300 µs, duty cycle 1.5%. *For PNP types voltage and current values are negative. Fig.1 Power derating P D , Power dissipation, (W) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 T C , Case temperature (°C) www.nellsemi.com Page 2 of 4 175 200 2.5 MH Z 2.87 A 2N3055(NPN) RoHS MJ2955(PNP) RoHS SEMICONDUCTOR Nell High Power Products Fig.2 Active region safe operating area 2N3055, MJ2955 20 l C , Collector current, (A) 50µs 10 dc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate l C -V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 1ms 6 4 500µs 250µs 2 The data of fig.2 is based on T C = 25°C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to fig.1 1 0.6 0.4 Bonding wire limit Thermally limited @ T C = 25°C (single pulse) Second breakdown limit 0.2 6 10 20 40 60 V CE , Collector-emitter voltage (V) Fig.3 DC Current gain 2N3055(NPN) MJ2955(PNP) 200 500 V CE = 4.0V T J = 150°C 200 25°C 100 -55°C 70 50 30 20 10 7.0 5.0 0.1 V CE = 4.0V T J = 150°C h FE , DC current gain h FE , DC current gain 300 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 70 -55°C 50 30 20 10 0.1 5.0 7.0 10 25°C 0.2 0.3 l C , Collector current (A) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 l C , Collector current (A) Fig.4 Collector saturation region MJ2955(PNP) 2.0 T J = 25°C 1.6 l C = 1.0A 4.0A 8.0A 1.2 0.8 0.4 0 5.0 10 20 50 100 200 V CE , Collector-emitter voltage (V) V CE , Collector-emitter voltage (V) 2N3055(NPN) 500 1000 2000 5000 l B , Base current (mA) www.nellsemi.com 2.0 T J = 25°C 1.6 l C = 1.0A 4.0A 8.0A 1.2 0.8 0.4 0 5.0 10 20 50 100 200 500 1000 2000 5000 l B , Base current (mA) Page 3 of 4 2N3055(NPN) RoHS MJ2955(PNP) RoHS SEMICONDUCTOR Nell High Power Products Fig.5 “On” Voltages 2N3055(NPN) MJ2955(PNP) 2.0 1.4 T J = 25°C T J = 25°C 1.2 1.6 0.8 0.6 Voltage, (V) Voltage, (V) 1.0 V BE(Sat) @ l C /l B = 10 V BE @ V CE = 4.0V 1.2 V BE(Sat) @ l C /l B = 10 V BE @ V CE = 4.0V 0.8 0.4 0.4 0.2 0 0.1 V CE(Sat) @ l C /l B = 10 V CE(Sat) @ l C /l B = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0 0.1 5.0 7.0 10 l C , Collector current (A) www.nellsemi.com 0.2 0.3 0.5 0.7 1.0 2.0 3.0 l C , Collector current (A) Page 4 of 4 5.0 7.0 10