VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 188 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data M1/O1 VRRM Type S1 VRRM Type V A6~ E6~ K6~ V U1/W1 1200 VUB 120-12 NO2 1600 VUB 120-16 NO2 1200 VUB 160-12 NO2 1600 VUB 160-16 NO2 M/O 10 Symbol Conditions VRRM IdAVM TC = 80°C, rect., d = 1/3 I2t Maximum Ratings 188 V A 1200/1600 Rectifier Diodes IFSM W U S/T 10 Ptot TVJ = 45°C, TVJ = 150°C, t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V 1100 960 A A TVJ = 45°C, TVJ = 150°C, t = 10 ms, VR = 0 V t = 10 ms, VR = 0 V 6050 4610 A A 160 W TC = 25°C per diode VUB 120 1200 ± 20 VUB160 1200 ± 20 V V Features • Soldering connections for PCB mounting • Isolation voltage 3600 V~ • Ultrafast diode • Convenient package outline l UL registered E 72873 • Case and potting UL94 V-0 Applications • Drive Inverters with brake system TVJ = 25°C to 150°C Continuous IC25 IC80 TC = 25°C, DC TC = 80°C, DC TC = 80°C, d = 0.5 140 100 95 177 125 95 A A A ICM tp 280 350 A Ptot TC = 25°C 570 690 W 2 functions in one package Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability 1200 34 48 V A A Dimensions in mm (1 mm = 0.0394") 200 180 A A 140 W -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ 2-2.5 18-22 Nm lb.in. 12.7 9.4 50 mm mm m/s2 80 g IFSM Ptot Fast Recovery Diode VRRM IFAV IFRMS IGBT VCES VGE = Pulse width limited by TVJM TC = 80°C, rect. d = ½ TC = 80°C, rect. d = ½ TVJ = 45°C, TVJ = 150°C, t = 10 ms t = 10 ms TC = 25°C TVJ TVJM Tstg Md Module VISOL 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M5) (10-32 UNF) dS dA a Creep distance on surface Strike distance in air Maximum allowable acceleration Weight typ. Advantages • • • • IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 411 Data according to IEC 60747 1-2 VUB 120 / 160 Conditions IR VR = VRRM, VR = VRRM, TVJ = 25°C TVJ = 150°C 0.3 5 mA mA IF = 150 A, TVJ = 25°C 1.46 V 0.87 4.0 V mΩ VT0 rT RthJC Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. For power-loss calculations only TVJ = 150°C per diode 0.6 K/W RthCH 0.2 VBR(CES) VGE(th) VGS = 0 V, IC = 1 mA IC = 4 mA ICES VCE = 1200 V, TVJ = 25°C TVJ = 125°C VCEsat VGE = 15 V, tSC VUB 120 VUB 160 VGE = 15 V, VCE = 900 V, TVJ = 125°C, RG = 15/10 Ω, non repetitive (SCSOA) IGBT RBSOA Cies IC = 50 A IC = 75 A 1200 4.5 VGE = 15 V, VCE = 1200 V, TVJ = 125°C, Clamped Inductive load, L = 100 µH RG = 15 Ω VUB 120 RG = 10 Ω VUB 160 VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 120 VUB 160 td(on) td(on) td(off) td(off) Eon VUB 120 VCE = 600 V, IC = 50/75 A VGE = 15 V, RG = 15/10 Ω Inductive load; L = 100 µH TVJ = 125°C Eoff VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 VUB 120 VUB 160 RthJC VUB 160 VF VT0 rT IRM trr RthJC RthCH Fast Recovery Diode IR VR = VRRM, TVJ = 25°C TVJ = 125°C 0.2 1 mA mA 2.1 2.2 V V 10 µs 150 200 A A 170 330 680 750 11 12 8 10 ns ns ns ns mJ mJ mJ mJ 0.1 0.1 0.22 K/W 0.18 K/W K/W K/W 0.5 1 mA mA IF = 30 A, TVJ = 25°C 2.7 V For power-loss calculations only TVJ = 150°C 1.3 15 V mΩ 0.75 IF = 50 A, -diF/dt = 100 A/µs, VR = 100 V 8 12 A IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V 40 60 ns 0.3 0.9 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. 2-2 V V nF nF VUB 160 VUB 120 6.5 5.7 7.4 VUB 120 RthCH K/W 411 VF Rectifier Rectifier Diodes Diodes Symbol © 2004 IXYS All rights reserved