ECO-PACTM 2 IGBT Module PSSI 45D/06 PSSI 46D/06 IC80 = 48 A VCES = 600 V VCE(sat)typ. = 2.3 V Preliminary Data Sheet FH 13 EG 1 IK 10 A1 FH 13 IK 10 RT 16 A1 VX 18 LN 9 VX 18 RT 16 PSSI 46D/06 PSSI 45D/06 IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 600 V ± 20 V 69 48 A A Features • • • • • Package with DCB ceramic base plate Isolation voltage 3000 V∼ Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 100 VCES A tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive 10 µs • Ptot TC = 25°C 208 W Advantages Symbol Conditions (TVJ Characteristic Values = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff VGE = 0 V; 2.3 2.8 4.5 TVJ = 25°C TVJ = 125°C 2.8 V V 6.5 V 0.8 4.4 mA mA 100 nA Inductive load, TVJ = 125°C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22 Ω 50 55 300 30 1.8 1.4 ns ns ns ns mJ mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2.8 nF RthJC RthJH (per IGBT) 1.2 0.6 K/W K/W with heatsink compound (0.42 K/m.K; 50 µm) • • • • • UL registered, E 148688 Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSSI 45/46D Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 134 82 Symbol Conditions Characteristic Values min. typ. max. VF IF = 60 A; TVJ = 25°C TVJ = 125°C 1.78 1.33 IRM t rr IF = 60 A; diF/dt = 500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 28 100 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 1.32 0.66 K/W K/W A A 1.99 Package style and outline Dimensions in mm (1mm = 0.0394“) PSSI 45D/06 V V Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md Mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s 2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight PSSI 46D/06 mm mm 24 g Standard Diode Symbol Test Conditions IFAVM VF VRRM IR rectangular, TJ = 150 °C Characteristic Value IF = 80 A, TJ = 25 °C TJ = 25 °C TJ = 150 °C IFSM VTO rT RthJC 53 A 1.2 V 1200 V 50 µA 4 mA TVJ = 45 °C t = 10 ms (50 Hz), sine 800 A VR = 0 t = 8.3 ms (60 Hz), sine 880 A TVJ = TVJM t = 10 ms (50 Hz), sine 720 A VR = 0 t = 8.3 ms (60 Hz), sine 790 A For power-loss calculations only (TVJ = TVJM) 0.8 V 4.8 mΩ Standard Diode tbd K/W 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20