VUE 130-12NO7 IdAV = 130 A VRRM = 1200 V trr = 40 ns Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) in ECO-PAC 2 Preliminary data sheet VRSM VRRM V V 1200 1200 PS16 Typ ~A 1 ~L 9 ~ K10 VUE 130-12NO7 EG 1 Pin arangement see outlines Symbol Conditions IdAV ① IdAVM TC = 70°C, module 130 90 A A IFSM TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 525 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 415 440 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1160 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 860 820 A2s A2 s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ I2t Maximum Ratings TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Weight Mounting torque (M4) typ. Symbol Conditions 1.5-2/14-18 Nm/lb.in. 24 g Characteristic Values typ. max. IR VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM 1 2.5 mA mA VF IF = 60 A TVJ = 25°C 2.7 V VT0 rT for power-loss calculations only RthJC RthCH per diode; DC current per diode, DC current, typ. IRM trr IF = 130 A, -diF/dt = 100 A/µs VR = 100 V, TVJ = 100°C IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C a dS dA Max. allowable acceleration creeping distance on surface (pin to heatsink) strike distance in air (pin to heatsink) Features • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications • Supplies for DC power equipment • Input and output rectifiers for high frequency • Battery DC power supplies • Field supply for DC motors Advantages • Space and weight savings • Improved temperature and power cycling capability • Small and light weight • Low noise switching Dimensions in mm (1 mm = 0.0394") 1.07 V 8.2 mΩ 0.8 K/W 0.2 K/W 7 40 50 11.2 9.7 15 A ns m/s2 mm mm IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 241 Data according to IEC 60747 refer to a single diode unless otherwise stated ① for resistive load at bridge output. 1-2 B3 VUE 130-12NO7 100 10 A µC 80 Qr IF TVJ = 150°C TVJ = 100°C TVJ = 25°C 60 100 TVJ = 100°C TVJ = 100°C A VR = 600 V 8 VR = 600 V 80 IRM IF = 30 A 6 IF = 30 A IF = 15 A 60 IF = 15 A IF = 7.5 A IF = 7.5 A 40 4 40 20 2 20 DWLP55-12 0 0 1 2 VF V DWLP55-12 0 100 3 Fig. 1 Forward current IF versus VF 2,0 200 400 280 120 TVJ = 100°C TVJ = 100°C tfr VR = 600 V VR = 15 A V VFR 240 IF = 30 A B3 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt trr Kf 0 Fig. 2 Reverse recovery charge Qr versus -diF/dt ns 1,5 DWLP55-12 0 A/µs 1000 -diF/dt VFR 1,2 µs tfr 80 0,8 40 0,4 IF = 15 A 1,0 IF = 7.5 A IRM 200 0,5 Qr DWLP55-12 DWLP55-12 0,0 0 40 80 120 C 160 DWLP55-12 160 0 200 400 TVJ 600 800 1000 A/µs -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 0 0 200 400 0,0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 1 K/W ZthJC 0,1 0,01 0,0001 VUE130-12 0,001 0,01 0,1 s 1 10 t Fig. 7 Typical transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 241 NOTE: Fig. 2 to Fig. 6 shows typical values 2-2