IXYS VUO34

VUO 34
IdAVM = 45 A
VRRM = 800-1800 V
Three Phase
Rectifier Bridge
VRSM
VRRM
V
V
900
1300
1500
1700
1900
800
1200
1400
1600
1800
4 5
1/2
Type
12
VUO 34-08NO1
VUO 34-12NO1
VUO 34-14NO1
VUO 34-16NO1
VUO 34-18NO1
Symbol
Test Conditions
IdAV
IdAV
IdAVM
TK = 90°C, module
TA = 45°C (RthKA = 0.5 K/W), module
module
IFSM
TVJ = 45°C;
VR = 0
10
8
6
4/5
8
10
6
Maximum Ratings
Features
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
Leads suitable for PC board soldering
UL registered E72873
●
36
37
45
A
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
300
320
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
260
280
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
425
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
340
325
A2s
A2s
-40...+130
130
-40...+125
°C
°C
°C
3000
3600
V~
V~
●
●
●
●
●
●
I2t
●
●
●
TVJ
TVJM
Tstg
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t=1s
Md
Mounting torque
(M5)
(10-32UNF)
Weight
typ.
Symbol
Test Conditions
IR
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
£
£
0.3
5
mA
mA
VF
IF
TVJ = 25°C
£
1.51
V
VT0
rT
For power-loss calculations only
0.8
15
V
mW
RthJH
per diode, 120° rect.
per module, 120° rect.
2.5
0.42
K/W
K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s2
= 55 A;
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
2 - 2.5
18-22
35
Nm
lb.in.
g
●
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
●
●
●
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2
VUO 34
90
A
80
IF
250
IFSM
70
50 Hz
0.8 x VRRM
A
A2s
I2 t
200
TVJ = 25°C
TVJ = 130°C
1000
d
TVJ = 45°C
60
TVJ = 45°C
150
50
max.
100
40
TVJ = 130°C
100
typ.
30
TVJ = 130°C
20
50
10
0
0.0
0.5
1.0
1.5
0
10-3
2.0 V 2.5
VF
Fig. 1 Forward current versus voltage
drop per diode
10
10-2
10-1
100
s
1
10
ms
t
t
Fig. 2 Surge overload current per diode
IFSM: Crest value. t:duration
150
Fig. 3 I2t versus time (1-10 ms)
per diode
50
Ptot
RthKA K/W
W
IdAVM A
0.5
1
1.5
2
3
4
6
120
90
40
30
60
20
30
10
0
0
0
10
20
30
40
A 0
25
50
75
100
125 °C 150
0
25
50
75
100
125 °C 150
TA
TK
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at
heatsink temperature TK
IdAVM
3.0
K/W
ZthJK
2.5
ZthJK
2.0
1.5
Constants for ZthJK calculation:
i
1.0
1
2
3
4
0.5
0.0
10-3
10-2
10-1
100
101
s
Rth (K/W)
ti (s)
0.005
0.3
1.245
0.95
0.008
0.05
0.1
0.5
102
t
Fig. 6 Transient thermal impedance junction to heatsink per diode
© 2000 IXYS All rights reserved
2-2