VUO 34 IdAVM = 45 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 4 5 1/2 Type 12 VUO 34-08NO1 VUO 34-12NO1 VUO 34-14NO1 VUO 34-16NO1 VUO 34-18NO1 Symbol Test Conditions IdAV IdAV IdAVM TK = 90°C, module TA = 45°C (RthKA = 0.5 K/W), module module IFSM TVJ = 45°C; VR = 0 10 8 6 4/5 8 10 6 Maximum Ratings Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop Leads suitable for PC board soldering UL registered E72873 ● 36 37 45 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 320 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 260 280 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 425 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 340 325 A2s A2s -40...+130 130 -40...+125 °C °C °C 3000 3600 V~ V~ ● ● ● ● ● ● I2t ● ● ● TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32UNF) Weight typ. Symbol Test Conditions IR VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM £ £ 0.3 5 mA mA VF IF TVJ = 25°C £ 1.51 V VT0 rT For power-loss calculations only 0.8 15 V mW RthJH per diode, 120° rect. per module, 120° rect. 2.5 0.42 K/W K/W dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration 12.7 9.4 50 mm mm m/s2 = 55 A; Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors 2 - 2.5 18-22 35 Nm lb.in. g ● Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 VUO 34 90 A 80 IF 250 IFSM 70 50 Hz 0.8 x VRRM A A2s I2 t 200 TVJ = 25°C TVJ = 130°C 1000 d TVJ = 45°C 60 TVJ = 45°C 150 50 max. 100 40 TVJ = 130°C 100 typ. 30 TVJ = 130°C 20 50 10 0 0.0 0.5 1.0 1.5 0 10-3 2.0 V 2.5 VF Fig. 1 Forward current versus voltage drop per diode 10 10-2 10-1 100 s 1 10 ms t t Fig. 2 Surge overload current per diode IFSM: Crest value. t:duration 150 Fig. 3 I2t versus time (1-10 ms) per diode 50 Ptot RthKA K/W W IdAVM A 0.5 1 1.5 2 3 4 6 120 90 40 30 60 20 30 10 0 0 0 10 20 30 40 A 0 25 50 75 100 125 °C 150 0 25 50 75 100 125 °C 150 TA TK Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Maximum forward current at heatsink temperature TK IdAVM 3.0 K/W ZthJK 2.5 ZthJK 2.0 1.5 Constants for ZthJK calculation: i 1.0 1 2 3 4 0.5 0.0 10-3 10-2 10-1 100 101 s Rth (K/W) ti (s) 0.005 0.3 1.245 0.95 0.008 0.05 0.1 0.5 102 t Fig. 6 Transient thermal impedance junction to heatsink per diode © 2000 IXYS All rights reserved 2-2