SEMICONDUCTOR KTX201U TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES B B1 ・Including two devices in USV. (Ultra Super mini type with 5 leads) 1 5 A 2 C ・Reduce a quantity of parts and manufacturing process A1 C ・Simplify circuit design. 4 H 3 T Marking EQUIVALENT CIRCUIT(TOP VIEW) 5 4 2 4 0.65 D G 0.2+0.10/-0.05 H _ 0.1 0.9 + 0.15+0.1/-0.05 T 0-0.1 1 h FE Rank 1. Q 1 BASE 2. Q 1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q 1 COLLECTOR C 3 B1 C MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + G 5 Q2 Q1 1 Type Name D DIM A A1 B 2 3 USV Q1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -150 ㎃ Base Current IB -30 ㎃ SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 ㎃ Base Current IB 30 ㎃ SYMBOL RATING UNIT PC * 200 ㎽ Tj 150 ℃ Tstg -55～150 ℃ Q2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Q1 Q2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage Temperature Range 2002. 6. 14 Revision No : 2 1/5 KTX201U Q1 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 ㎂ Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 ㎂ 120 - 400 hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE=-6V, IC=-2㎃ VCE(sat) IC=-100㎃, IB=-10㎃ - -0.1 -0.3 V fT VCE=-10V, IC=-1㎃ 80 - - ㎒ Transition Frequency Collector Output Capacitance Cob VCB=-10V, IE=0, f=1㎒ - 4.0 7.0 ㎊ Noise Figure NF VCE=-6V, IC=-0.1㎃, f=1㎑, Rg=10㏀ - 1.0 10 ㏈ TEST CONDITION MIN. TYP. MAX. UNIT. Note)hFE Classification : Y(4)120~240, GR(6)200~400 Q2 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 ㎂ Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ㎂ 120 - 400 hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE=6V, IC=2㎃ VCE(sat) IC=100㎃, IB=10㎃ - 0.1 0.25 V fT VCE=10V, IC=1㎃ 80 - - ㎒ Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1㎒ - 2.0 3.5 ㎊ Noise Figure NF VCE=6V, IC=0.1㎃, f=1㎑, Rg=10㏀ - 1.0 10 ㏈ Note)hFE Classification : Y(4)120~240, 2002. 6. 14 GR(6)200~400 Revision No : 2 2/5 KTX201U Q 1 (PNP TRANSISTOR) -200 3k COMMON EMITTER Ta=25 C I B =-2.0mA I B =-1.5mA -160 I B =-1.0mA -120 I B =-0.5mA -80 I B =-0.2mA -40 0 -1 -2 -3 -4 -5 -6 1k 500 -7 Ta=25 C Ta=-25 C 100 VCE =-1V -0.3 -1 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -10 COMMON EMITTER IC /I B =10 -0.3 -0.1 0 =1 Ta -0.05 -0.01 -0.1 0 C Ta=25 C Ta=-25 C -0.03 -0.3 -1 -3 -10 -30 -100 -3 -0.3 -0.3 -1 -3 -30 -100 -300 IB - VBE -1k 100 50 30 COMMON EMITTER VCE =-6V -300 -100 Ta=1 00 C COMMON EMITTER VCE =-10V Ta=25 C BASE CURRENT IB (µA) TRANSITION FREQUENCY f T (MHz) -10 COLLECTOR CURRENT I C (mA) -30 -10 -3 -1 -0.3 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 2002. 6. 14 -300 (mA) -0.5 -0.1 -0.1 -300 500 300 10 -0.1 C -100 -1 fT - IC 1k -30 COMMON EMITTER I C /I B =10 Ta=25 C -5 COLLECTOR CURRENT I C (mA) 3k -10 VBE(sat) - I C VCE(sat) - I C -0.5 -3 COLLECTOR CURRENT I COLLECTOR-EMITTER VOLTAGE VCE (V) -1 VCE =-6V Ta=100 C 300 50 30 -0.1 I B =0mA 0 COMMON EMITTER Ta=2 5 C Ta=-2 5 C -240 h FE - I C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - V CE Revision No : 2 -300 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 3/5 KTX201U Q 2 (NPN TRANSISTOR) h FE - I C I C - V CE 6.0 200 1k COMMON EMITTER 5.0 Ta=25 C 3.0 DC CURRENT GAIN hFE COLLECTOR CURRENT I C (mA) 240 2.0 160 1.0 120 0.5 80 I B =-0.2mA 40 0 0 0 1 2 3 4 5 6 COMMON EMITTER 500 300 100 50 30 V CE =1V 10 7 0.1 COLLECTOR-EMITTER VOLTAGE V CE (V) 0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.1 00 =1 Ta 0.05 C Ta=25 C Ta=-25 C 0.03 0.3 1 3 10 30 100 3 0.5 0.3 0.1 300 0.1 0.3 1 3 10 100 30 300 COLLECTOR CURRENT I C (mA) 3k 100 50 30 300 100 0 C Ta=2 5 C Ta=25 C 500 300 COMMON EMITTER VCE =6V 1k 30 Ta=1 0 COMMON EMITTER VCE =10V Ta=25 C BASE CURRENT IB (µA) TRANSITION FREQUENCY f T (MHz) 300 I B - VBE 10 3 1 10 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 2002. 6. 14 100 1 fT - I C 1k 30 COMMON EMITTER IC /IB =10 Ta=25 C 5 COLLECTOR CURRENT I C (mA) 3k 10 10 0.3 0.01 0.1 3 V BE(sat) - I C COMMON EMITTER IC /IB =10 0.5 1 COLLECTOR CURRENT I C (mA) VCE(sat) - I C 1 VCE =6V Ta=100 C Ta=25 C Ta=-25 C Revision No : 2 300 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 4/5 COLLECTOR POWER DISSIPATION PC (mW) KTX201U P C - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2002. 6. 14 Revision No : 2 5/5