KTX402U SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B B1 FEATURES Including two(TR, Diode) devices in USV. 1 5 A 2 C Simplify circuit design. A1 C (Ultra Super Mini type with 5 leads) 3 Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT (TOP VIEW) Marking 5 4 4 D DIM A A1 B B1 C D G 5 H H Type Name T T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25+ 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 4 G D1 1 CG Q1 2 3 1 2 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 ANODE BASE EMITTER COLLECTOR CATHODE 3 MARK SPEC Type KTX402U KTX402U Q1 hFE Rank : Y Q1 hFE Rank : GR CG CJ Mark MAXIMUM RATINGS (Ta=25 USV ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 Collector Current IC 150 Emitter Current IB 30 Collector Power Dissipation PC 100 Junction Temperature Tj 150 Tstg -55~125 SYMBOL RATING UNIT VRM 30 V Reverse Voltage VR 30 V Maximum (Peak) Forward Current IFM 300 Average Forward Current IO 200 Surge Current (10mS) IFSM 1 Junction Temperature Tj 125 Tstg -55 125 Storage Temperature Range DIODE (SBD) D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Storage Temperature Range 2003. 3. 11 Revision No : 1 A 1/4 KTX402U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 hFE (Note) VCE=6V, IC=2 120 - 400 DC Current Gain Collector-Emitter Saturation Voltage VCE(SAT) IC=100 , IB=10 - 0.1 0.25 fT VCE=10V, IC=1 80 - - - 2.0 3.5 - 1.0 10 dB MIN. TYP. MAX. UNIT Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1 Noise Figure NF VCE=6V, IC=0.1 , f=1 Note) hFE Classification Y:120~240, UNIT , Rg=10 V GR:200~400. DIODE (SBD) D1 CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION VF(1) IF=1mA - 0.22 - VF(2) IF=10mA - 0.29 - VF(3) IF=100mA - 0.38 - VF(4) IF=200mA - 0.43 0.55 Reverse Current IR VR=30V - - 50 Total Capacitance CT VR=0, f=1 - 50 - 2003. 3. 11 Revision No : 1 V 2/4 KTX402U Q 1 (NPN TRANSISTOR) h FE - I C I C - V CE 200 1k COMMON EMITTER Ta=25 C 5.0 3.0 DC CURRENT GAIN h FE 6.0 2.0 160 1.0 120 0.5 80 I B =0.2mA 40 0 0 0 1 2 3 4 5 6 300 100 50 30 VCE =1V 0.3 1 3 30 100 VCE(sat) - I C VBE(sat) - I C 10 COMMON EMITTER I C /I B =10 0.5 0.3 0.1 00 =1 Ta 0.05 C Ta=25 C Ta=-25 C 0.03 300 COMMON EMITTER I C /I B =10 Ta=25 C 5 3 1 0.5 0.3 0.1 0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 3k BASE CURRENT I B (µA) 500 300 100 50 30 10 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) Revision No : 1 100 300 I B - V BE COMMON EMITTER VCE =10V Ta=25 C 1k 30 300 COMMON EMITTER VCE =6V 1k 300 100 Ta=1 00 C Ta=2 5 C Ta=25 C 3k 10 COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 10 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2003. 3. 11 VCE =6V Ta=100 C Ta=25 C Ta=-25 C COLLECTOR-EMITTER VOLTAGE VCE (V) 1 0.01 COMMON EMITTER 500 10 0.1 7 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT I C (mA) 240 30 10 3 1 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 3/4 KTX402U h PARAMETER - VCE h PARAMETER - I C Y O h PARAMETER h fe h ie xkΩ 50 30 GR BL O h oe xµ Y O 5 3 GR 1 O 0.1 h re x10 -4 5 10 BL BL 3 0.3 3 GR O Y h oe xµ GR BL GR h ie xkΩ Y O Y O h re x10 -4 0.1 0.5 30 50 h fe Y O 10 1 1 0.5 BL 30 BL Y 0.5 0.3 GR 100 BL GR Y 10 COMMON EMITTER I C =2mA, Ta=25 C 300 Ω 100 0.1 BL 1k h PARAMETER GR 2k COMMON EMITTER VCE =12V, f=270Hz Ta=25 C Ω 2k 1k 500 300 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) D 1 (SBD) 10 IR 10 Ta=25 C 2 REVERSE CURRENT I R (µA) FORWARD CURRENT I F (mA) I F - VF 10 1 10 -1 10 -2 10 -3 10 -4 0 100 200 300 400 500 - VR Ta=25 C 5 1 0.5 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (mV) C T - VR TOTAL CAPACITANCE C T (pF) 100 Ta=25 C f=1MHz 50 10 5 0 5 10 15 20 25 30 REVERSE VOLTAGE V R (V) 2003. 3. 11 Revision No : 1 4/4