KTX302U SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE TECHNICAL DATA GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B B1 FEATURES Including two(TR, Diode) devices in USV. 1 5 A 2 C Simplify circuit design. A1 C (Ultra Super Mini type with 5 leads) 3 Reduce a quantity of parts and manufacturing process. 4 D EQUIVALENT CIRCUIT (TOP VIEW) Marking 4 Type Name 5 B1 C D G H H 5 DIM A A1 B T 4 T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25+ 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 G 1 CF Q1 D1 2 3 1 2 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 3 ANODE BASE EMITTER COLLECTOR CATHODE MARK SPEC Type KTX302U KTX302U Q1 hFE Rank : Y Q1 hFE Rank : GR CF CH Mark MAXIMUM RATINGS (Ta=25 USV ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 Collector Current IC -150 Emitter Current IB -30 Collector Power Dissipation PC 100 Junction Temperature Tj 150 Tstg -55~125 SYMBOL RATING UNIT VRM 30 V Reverse Voltage VR 30 V Maximum (Peak) Forward Current IFM 300 Average Forward Current IO 200 Surge Current (10mS) IFSM 1 Junction Temperature Tj 125 Tstg -55 125 Storage Temperature Range DIODE (SBD) D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Storage Temperature Range 2003. 3. 11 Revision No : 1 A 1/4 KTX302U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1 Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 hFE (Note) VCE=-6V, IC=-2 120 - 400 - -0.1 -0.3 80 - - - 4 7 - 1.0 10 dB MIN. TYP. MAX. UNIT DC Current Gain Collector-Emitter Saturation Voltage VCE(SAT) fT Transition Frequency IC=-100 , IB=-10 VCE=-10V, IC=-1 Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 Noise Figure NF VCE=-6V, IC=-0.1 Note) hFE Classification Y:120~240, , f=1 , Rg=10 V GR:200~400. DIODE (SBD) D1 CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION VF(1) IF=1mA - 0.22 - VF(2) IF=10mA - 0.29 - VF(3) IF=100mA - 0.38 - VF(4) IF=200mA - 0.43 0.55 Reverse Current IR VR=30V - - 50 Total Capacitance CT VR=0, f=1 - 50 - 2003. 3. 11 Revision No : 1 V 2/4 KTX302U Q 1 (PNP TRANSISTOR) -240 DC CURRENT GAIN h FE I B =-1.0mA -120 I B =-0.5mA -80 I B =-0.2mA -40 I B =0mA -1 -2 -3 -4 Ta=25 C Ta=-25 C 100 VCE =-1V -5 -6 30 -0.1 -7 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) VCE(sat) - I C VBE(sat) - I C -10 COMMON EMITTER IC /IB =10 -0.5 -0.3 -0.1 00 =1 Ta -0.05 C Ta=25 C Ta=-25 C -0.03 -0.3 -1 -3 -10 -30 -100 -3 -1 -0.5 -0.3 -0.1 -300 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) fT - IC I B - VBE -1k 100 50 30 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) Revision No : 1 300 -100 -30 -10 5 C Ta=-2 5 C 500 300 COMMON EMITTER VCE =-6V -300 C 1k -300 Ta=2 COMMON EMITTER VCE =-10V Ta=25 C -300 COMMON EMITTER I C /IB =10 Ta=25 C -5 COLLECTOR CURRENT I C (mA) 3k 10 0.1 VCE =-6V Ta=100 C 300 COLLECTOR-EMITTER VOLTAGE VCE (V) -1 -0.01 -0.1 500 Ta=1 00 0 1k 50 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY f T (MHz) COMMON EMITTER I B =-1.5mA -160 0 2003. 3. 11 3k COMMON EMITTER Ta=25 C I B =-2.0mA -200 h FE - I C BASE CURRENT IB (µA) COLLECTOR CURRENT I C (mA) I C - V CE -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) 3/4 KTX302U D 1 (SBD) 10 IR 10 Ta=25 C 2 REVERSE CURRENT I R (µA) FORWARD CURRENT I F (mA) I F - VF 10 1 10 -1 10 -2 10 -3 10 -4 0 100 200 300 400 500 - VR Ta=25 C 5 1 0.5 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (mV) C T - VR TOTAL CAPACITANCE C T (pF) 100 Ta=25 C f=1MHz 50 10 5 0 5 10 15 20 25 30 REVERSE VOLTAGE V R (V) 2003. 3. 11 Revision No : 1 4/4