DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 514 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 556 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A) 3 1.5 FEATURES 0.4 +0.1 –0.05 2.8 ±0.2 The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0 to 0.1 1 2 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER PACKAGE 2SJ626 SC-96 (Mini Mold Thin Type) EQUIVALENT CIRCUIT Marking: XN Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –60 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TA = 25°C) ID(DC) m1.5 A ID(pulse) m6.0 A PT1 0.2 W Drain Current (pulse) Note1 Total Power Dissipation Note2 PT2 1.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Total Power Dissipation Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15962EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 2002 2SJ626 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –1.0 µA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 µA –2.5 V Gate to Source Cut-off Voltage VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance VDS = –10 V, ID = –1.0 mA –1.5 –2.1 | yfs | VDS = –10 V, ID = –1.0 A 1.0 2.5 RDS(on)1 VGS = –10 V, ID = –1.0 A 310 388 mΩ RDS(on)2 VGS = –4.5 V, ID = –1.0 A 385 514 mΩ RDS(on)3 VGS = –4.0 V, ID = –1.0 A 417 556 mΩ S Input Capacitance Ciss VDS = –10 V 255 pF Output Capacitance Coss VGS = 0 V 45 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 17 pF Turn-on Delay Time td(on) VDD = –30 V, ID = –1.0 A 17 ns VGS = –10 V 29 ns RG = 10 Ω 92 ns 65 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –48 V 8.2 nC Gate to Source Charge QGS VGS = –10 V 1.3 nC Gate to Drain Charge QGD ID = –1.5 A 2.2 nC IF = 1.5 A, VGS = 0 V 0.86 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE VGS(−) D.U.T. VGS RL RG PG. Wave Form 0 VGS 10% VDS(−) VDD PG. 90% 90% VDS VDS VGS (−) 0 Wave Form 10% 0 td(on) τ tr ton 10% td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 D.U.T. 90% Data Sheet D15962EJ1V0DS IG = −2 mA RL 50 Ω VDD 2SJ626 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 Mounted on FR-4 board t ≤ 5 sec. PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 1.25 1 0.75 0.5 0.25 0 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -10 RDS(on) Limited (VGS = −10 V) ID(pulse) PW = 1 ms 10 ms 100 ms -1 5s -0.1 Single Pulse Mounted on FR-4 board of 2 50 cm x 1.1 mm -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) Single Pulse Without board 100 Mounted on FR-4 board of 2 50 cm x 1.1 mm 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15962EJ1V0DS 3 2SJ626 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -6 -10 Pulsed VDS = −10 V VGS = −10 V -1 ID - Drain Current - A ID - Drain Current - A Pulsed -4 −4.5 V -2 TA = 125°C 75°C 25°C −25°C -0.1 -0.01 −4.0 V -0.001 -0.0001 0 0 -1 -2 -1 -3 VDS - Drain to Source Voltage - V -5 10 | yfs | - Forward Transfer Admittance - S VDS = −10 V ID = −1.0 mA - 2.4 - 2.2 -2 - 1.8 - 1.6 -50 0 50 100 Pulsed VDS = −10 V 1 TA = −25°C 25°C 75°C 125°C 0.1 0.01 -0.01 -0.1 VGS = −4.0 V −4.5 V −10 V 400 200 0 -50 0 50 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 800 600 -10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed ID = −1.0 A -1 150 Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ -4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT - 2.6 800 Pulsed ID = −1.0 A 600 400 200 150 Tch – Channel Temperrature - °C 4 -3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V -2 0 0 -4 -8 - 12 - 16 VGS - Gate to Source Voltage - V Data Sheet D15962EJ1V0DS - 20 2SJ626 800 600 TA = 125°C 75°C 400 25°C -25°C 200 Pulsed VGS = −10 V 0 -0.01 -0.1 -1 -10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 800 TA = 125°C 600 75°C 25°C 400 −25°C 200 Pulsed VGS = −4.5 V 0 -0.01 -0.1 ID - Drain Current - A SWITCHING CHARACTERISTICS 800 1000 A= T TA TA ==125°C 125°C 125°C td(on), tr, td(off), tf - Switching Time – ns RDS(on) - Drain to Source On-state Resistance - mΩ -10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 600 75°C 25°C 400 -25°C 200 Pulsed VGS = −4.0 V 0 -0.01 -0.1 -1 t d(off) 100 tf tr t d(on) 10 VDD = −30 V VGS = −10 V RG = 10 Ω 1 -0.1 -10 ID - Drain Current – A -1 -10 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 1000 VGS = 0 V f = 1.0 MHz C iss 100 C oss 10 C rss IF – Diode Forward Current - A Ciss, Coss, Crss - Capacitance – pF -1 1 0.1 Pulsed VGS = 0 V 1 -0.1 0.01 -1 -10 -100 VDS - Drain to Source Voltage - V 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V Data Sheet D15962EJ1V0DS 5 2SJ626 DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 10 VGS – Gate to Source Voltage - V ID = −1.5 A VDD = −12 V −30 V −48 V -8 -6 -4 -2 0 0 2 4 6 8 10 QG – Gate Charge - nC 6 Data Sheet D15962EJ1V0DS 2SJ626 [MEMO] Data Sheet D15962EJ1V0DS 7 2SJ626 • The information in this document is current as of June, 2002. 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