DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1817 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA1817 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1.2 MAX. 1.0±0.05 0.25 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = −4.5 V, ID = −6.0 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = −4.0 V, ID = −6.0 A) RDS(on)3 = 19.2 mΩ MAX. (VGS = −2.5 V, ID = −6.0 A) • Built-in G-S protection diode against ESD 3° +5° –3° 0.1±0.05 1 4 6.4 ±0.2 PACKAGE µPA1817GR-9JG Power TSSOP8 0.65 0.27 +0.03 –0.08 4.4 ±0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 ORDERING INFORMATION PART NUMBER 0.5 0.6 +0.15 –0.1 1.0 ±0.2 0.1 0.8 MAX. 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m 12 V Drain Current (DC) (TA = 25°C) ID(DC) m 12 A ID(pulse) m 48 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16253EJ1V0DS00 (1st edition) Date Published August 2002 NS CP(K) Printed in Japan © 2002 µ PA1817 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V Gate Leakage Current IGSS VGS = Gate Cut-off Voltage Drain to Source On-state Resistance TYP. m 12 V, VDS = 0 V VDS = −10 V, ID = −1.0 mA VGS(off) Forward Transfer Admittance MIN. −0.5 −1.1 15 30 MAX. UNIT −1.0 µA m 10 µA −1.5 V | yfs | VDS = −10 V, ID = −6.0 A RDS(on)1 VGS = −4.5 V, ID = −6.0 A 9.6 12 mΩ RDS(on)2 VGS = −4.0 V, ID = −6.0 A 10 12.5 mΩ RDS(on)3 VGS = −2.5 V, ID = −6.0 A 14.5 19.2 mΩ S Input Capacitance Ciss VDS = −10 V 3100 pF Output Capacitance Coss VGS = 0 V 730 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 450 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −6.0 A 29 ns VGS = −4.0 V 235 ns RG = 10 Ω 170 ns 230 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −16 V 27 nC Gate to Source Charge QGS VGS = −4.0 V 5.6 nC Gate to Drain Charge QGD ID = −12 A 12 nC Body Diode Forward Voltage VF(S-D) IF = 12 A, VGS = 0 V 0.82 V Reverse Recovery Time trr IF = 12 A, VGS = 0 V 70 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 52 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE VGS(−) D.U.T. VGS RL RG PG. Wave Form 0 VGS 10 % VDS(−) VDD PG. 90 % 90 % VDS VDS VGS (−) 0 Wave Form 10 % 10 % 0 td(on) τ tr ton td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 D.U.T. 90 % Data Sheet G16253EJ1V0DS IG = −2 mA RL 50 Ω VDD µ PA1817 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 80 60 40 20 Mounted on ceramic substrate of 2 5000 mm x 1.1 mm 2 Mounted on FR-4 board 2 of 2500 mm x 1.6 mm 1.5 1 0.5 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA - 100 I D(pulse) PW = 1 m s I D(DC ) 10 m s -1 R DS (on) Lim ited (V G S = −4.5 V) 100 m s DC - 0.1 Single pulse Mounted on ceram ic substrate of 2 5000 m m x 1.1 m m - 0.01 - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A - 10 Single pulse Mounted on FR-4 board of 2500 mm2 x 1.6 mm 125°C/W 100 10 Mounted on ceramic substrate of 5000 mm2 x 1.1 mm 62.5°C/W 1 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16253EJ1V0DS 3 µ PA1817 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS - 100 - 50 Pulsed V GS = −4.5 V - 10 −4.0 V ID - Drain Current - A ID - Drain Current - A - 40 - 30 −2.5 V - 20 T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C - 1 - 0 .1 - 0 .0 1 - 10 - 0 .0 0 1 0 0 - 0.2 - 0.4 - 0.6 - 0 .0 0 0 1 - 0 .5 - 0.8 VDS - Drain to Source Voltage - V - 1 - 2 .5 100 | yfs | - Forward Transfer Admittance - S V DS = −10 V I D = −1.0 m A - 1.2 -1 - 0.8 - 0.6 - 0.4 -50 0 50 100 150 V DS = −10 V Pulsed 10 T A = 125°C 75°C 25°C −25°C 1 0.1 - 0.01 - 0.1 Tch - Channel Temperature - °C ID = −6.0 A Pulsed 20 V GS = −2.5 V 15 10 −4.0 V −4.5 V 5 0 -50 0 50 100 - 10 - 100 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 30 25 -1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ - 2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT - 1.4 Tch - Channel Temperature - °C 4 - 1 .5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V VDS = −10 V P u ls e d 30 ID = −6.0 A Pulsed 25 20 15 10 5 0 0 -2 -4 -6 -8 - 10 VGS - Gate to Source Voltage - V Data Sheet G16253EJ1V0DS - 12 µ PA1817 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 V GS = −4.5 V Pulsed 25 T A = 125°C 20 75°C 15 10 25°C 5 0 - 0.01 −25°C - 0.1 -1 - 10 - 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 V GS = −4.0 V Pulsed 25 T A = 125°C 20 75°C 15 10 25°C 5 −25°C 0 - 0.01 - 0.1 ID - Drain Current - A 10000 V GS = −2.5 V Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ - 100 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 30 T A = 125°C 75°C 20 15 10 25°C −25°C 5 0 - 0.01 - 0.1 -1 - 10 V GS = 0 V f = 1.0 M H z C iss 1000 C oss C rss 100 - 0.1 - 100 SWITCHING CHARACTERISTICS VDD = −10 V V G S = − 4 .0 V R G = 10 Ω tf 1 00 0 - 10 - 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE t d(off) 1 00 t d(on) 100 V GS = 0 V Pulsed IF - Diode Forward Current - A 1 00 00 -1 VDS - Drain to Source Voltage - V ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns - 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 -1 10 1 0.1 tr 10 - 0 .01 0.01 - 0 .1 -1 - 10 - 1 00 ID - Drain Current - A 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V Data Sheet G16253EJ1V0DS 5 µ PA1817 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V -5 ID = −12 A -4 V DD = −4.0 V −10 V −16 V -3 -2 -1 0 0 5 10 15 20 25 30 35 QG - Gate Charge - nC 6 Data Sheet G16253EJ1V0DS µ PA1817 [MEMO] Data Sheet G16253EJ1V0DS 7 µ PA1817 • The information in this document is current as of August, 2002. 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