DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1951 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The µ PA1951 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0.32 +0.1 –0.05 FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 88 mΩ MAX. (VGS = −4.5V, ID = −1.5 A) RDS(on)2 = 114 mΩ MAX. (VGS = −3.0 V, ID = −1.5 A) RDS(on)3 = 133 mΩ MAX. (VGS = −2.5 V, ID = −1.5 A) RDS(on)4 = 234 mΩ MAX. (VGS = −1.8 V, ID = −1.0 A) 6 5 4 1 2 3 1.5 2.8 ±0.2 +0.1 0.65–0.15 0.16+0.1 –0.06 0 to 0.1 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 ORDERING INFORMATION 6: Drain 1 1: Gate 1 5: Source 1 PART NUMBER PACKAGE µ PA1951TE SC-95 (Mini Mold Thin Type) 4: Drain 2 3: Gate 2 2: Source 2 Marking: TN EQUIVALENT CIRCUITS ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −12 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V Drain Current (DC) ID(DC) m2.5 A ID(pulse) m10 A Gate 1 PT1 1.15 W PT2 0.57 W Gate Protection Diode Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation (2 units) Total Power Dissipation (1 unit) Note2 Note2 Drain 1 Drain 2 Body Diode Source 1 Body Diode Gate 2 Gate Protection Diode Source 2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15613EJ1V0DS00 (1st edition) Date Published August 2002 NS CP(K) Printed in Japan © 2001 µ PA1951 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −12 V, VGS = 0 V −10 µA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 µA −1.5 V Gate Cut-off Voltage VDS = −10 V, ID = −1.0 mA VGS(off) −0.75 1.0 4.7 | yfs | VDS = −10 V, ID = −1.5 A RDS(on)1 VGS = −4.5 V, ID = −1.5 A 70 88 mΩ RDS(on)2 VGS = −3.0 V, ID = −1.5 A 85 114 mΩ RDS(on)3 VGS = −2.5 V, ID = −1.5 A 100 133 mΩ RDS(on)4 VGS = −1.8 V, ID = −1.0 A 140 234 mΩ Forward Transfer Admittance Drain to Source On-state Resistance −0.45 S Input Capacitance Ciss VDS = −10 V 270 pF Output Capacitance Coss VGS = 0 V 90 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 45 pF Turn-on Delay Time td(on) VDD = −6.0 V, ID = −1.5 A 14 ns VGS = −4.0 V 90 ns RG = 10 Ω 150 ns 130 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −10 V 2.4 nC Gate to Source Charge QGS VGS = −4.0 V 0.6 nC Gate to Drain Charge QGD ID = −2.5 A 0.8 nC IF = 2.5 A, VGS = 0 V 0.87 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS(−) RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS(−) VGS(−) 0 IG = −2 mA td(off) tf toff Data Sheet G15613EJ1V0DS µ PA1951 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 1.2 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 Mounted on FR-4 board of 5000 mm 2 x 1.1 mm, t ≤ 5 sec. 1 2 units 0.8 1 unit 0.6 0.4 0.2 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA R DS(on) Lim ited (V GS = −4.5 V) ID(pulse) - 10 ID(DC) PW = 1 m s -1 10 m s 5 s (2 units) - 0.1 100 m s 5 s (1 unit) Single pulse M ounted on FR-4 board of 5000 m m 2 x 1.1 m m - 0.01 - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A - 100 1000 PD (FET1) : PD (FET2) = 1: 0 100 PD (FET1) : PD (FET2) = 1: 1 10 Single pulse Mounted on FR-4 board of 5000 mm 2 x 1.1 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15613EJ1V0DS 3 µ PA1951 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS - 10 - 10 -1 -8 −3.0 V -6 −2.5 V -4 -2 - 0 .1 - 0 .0 0 1 - 0 .0 0 0 01 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 0 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 0 50 100 150 - 1 .5 -2 10 V DS = −10 V Pulsed 1 T A = −25°C 25°C 75°C 125°C 0.1 0.01 - 0.01 - 0.1 -1 - 10 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed V GS = −1.8 V, ID = −1.0 A 150 100 VGS = −2.5 V, ID = −1.5 A 50 V GS = −3.0 V, ID = −1.5 A V GS = −4.5 V, ID = −1.5 A 0 -50 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V V DS = −10 V ID = −1.0 mA -50 -1 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -1 - 0.9 - 0 .5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C - 0 .0 1 - 0 .0 0 0 1 −1.8 V 0 200 Pulsed 150 ID = −1.5 A 100 50 0 0 -2 -4 -6 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 4 VDS = −10 V P u ls e d V GS = −4.5 V ID - Drain Current - A ID - Drain Current - A Pulsed Data Sheet G15613EJ1V0DS -8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 V GS = −4.5 V Pulsed 150 T A = 125°C 75°C 100 50 25°C −25°C 0 - 0.01 - 0.1 -1 - 10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1951 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 V GS = −4.0 V Pulsed 150 T A = 125°C 75°C 100 25°C −25°C 50 0 - 0.01 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 150 V GS = −2.5 V Pulsed T A = 125°C 75°C 100 25°C −25°C 50 0 - 0.01 - 0.1 -1 - 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 250 V GS = −1.8 V Pulsed 200 T A = 125°C 75°C 150 100 25°C −25°C 50 - 0.01 - 0.1 -1 - 10 SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns - 10 ID - Drain Current - A td(off) tf tr td(on) 10 1 - 0.1 -1 ID - Drain Current - A 1000 100 - 0.1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A V DD = −6.0 V V GS = −4.0 V R G = 10 Ω -1 - 10 V GS = 0 V f = 1.0 MHz C iss 100 C oss C rss 10 - 0.1 ID - Drain Current - A -1 - 10 - 100 VDS - Drain to Source Voltage - V Data Sheet G15613EJ1V0DS 5 µ PA1951 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT/OUTPUT CHARACTERISTICS 10 -5 VGS - Gate to Source Voltage - V IF - Diode Forward Current - A Pulsed 1 V GS = 0 V 0.1 ID = −2.5 A -4 -3 -2 -1 0.01 0 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V 6 VDD = −6.0 V −10 V 0 0.5 1 1.5 2 QG - Gate Change - nC Data Sheet G15613EJ1V0DS 2.5 3 µ PA1951 [MEMO] Data Sheet G15613EJ1V0DS 7 µ PA1951 • The information in this document is current as of August, 2002. 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