NEC UPA651TT

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA651TT
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 69 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
RDS(on)2 = 88 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A)
RDS(on)3 = 142 mΩ MAX. (VGS = −1.8 V, ID = −1.5 A)
5
4
1
2
3
1.6
6
0~0.05
0.65
S
0.15 +0.1
−0.05
0.65
2.1±0.1
2.0±0.2
0.25±0.1
The µPA651TT is a switching device, which can be driven directly by a
1.8 V power source.
This device features a low on-state resistance and excellent switching
characteristics, and is suitable for applications such as power switch of
portable machine and so on.
MAX. 0.8
ORDERING INFORMATION
0.05 S
PACKAGE
µPA651TT
6pinWSOF (1620)
1,2,5,6 : Drain
3
: Gate
4
: Source
0.4±0.1
PART NUMBER
Marking: WE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8.0
V
Drain Current (DC) (TA = 25°C)
ID(DC)
m5.0
A
ID(pulse)
m20
A
PT1
0.2
W
PT2
1.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C)
Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
0.2 +0.1
−0.05
0.1 M S
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G16203EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
©
2002
µPA651TT
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = −20 V, VGS = 0 V
−10
µA
Gate Leakage Current
IGSS
VGS = m8.0 V, VDS = 0 V
m10
µA
−1.5
V
Gate Cut-off Voltage
VDS = −10 V, ID = −1.0 mA
VGS(off)
Forward Transfer Admittance
Drain to Source On-state Resistance
−0.45
| yfs |
VDS = −10 V, ID = −2.5 A
RDS(on)1
VGS = −4.5 V, ID = −2.5 A
55
69
mΩ
RDS(on)2
VGS = −2.5 V, ID = −2.5 A
66
88
mΩ
RDS(on)3
VGS = −1.8 V, ID = −1.5 A
85
142
mΩ
4.0
S
Input Capacitance
Ciss
VDS = −10 V
600
pF
Output Capacitance
Coss
VGS = 0 V
120
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
75
pF
Turn-on Delay Time
td(on)
VDD = −10 V, ID = −2.5 A
45
ns
VGS = −4.0 V
200
ns
RG = 10 Ω
435
ns
345
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = −16 V
5.5
nC
Gate to Source Charge
QGS
VGS = −4.0 V
1.2
nC
Gate to Drain Charge
QGD
ID = −5.0 A
2.1
nC
IF = 5.0 A, VGS = 0 V
0.94
V
Body Diode Forward Voltage
VF(S-D)
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS (−)
RL
VGS
RG
PG.
Wave Form
0
VGS
10%
PG.
VDD
90%
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
10%
0
10%
Wave Form
td(on)
tr
ton
RL
50 Ω
VDD
90%
VDS (−)
VGS (−)
0
IG = −2 mA
td(off)
tf
toff
Data Sheet G16203EJ1V0DS
µPA651TT
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.6
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
0
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
0
TA - Ambient Temperature - °C
−100
50
75
100
125
150
175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
R D S (o n ) L im ite d
(V G S = − 4 .5 V )
−10
I D (p u lse )
I D (D C )
PW = 1 m s
−1
10 m s
1 00 m s
−0.1
−0.01
−0.1
5 s
S ing le P u ls e
M o u nted on F R -4 b o a rd o f
2
5 0 c m × 1.1 m m
−1
−10
−100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
25
Single Pulse
Mounted on FR-4 board of
2
50 cm × 1.1 mm
100
10
1
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G16203EJ1V0DS
3
µPA651TT
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−20
−100
P u ls e d
ID - Drain Current - A
−12
− 2 .5 V
−8
− 1 .8 V
−4
−0.2
−0.4
−0.6
−0.8
−1
−1.2 −1.4
−1
−0.1
−1.6
T A = 12 5 °C
7 5°C
2 5°C
− 2 5°C
−0.01
−0.001
−0.0001
0
0
VDS = −10 V
P u ls ed
−10
V G S = − 4 .5 V
−16
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
−0.5
0
VDS - Drain to Source Voltage - V
0.9
0.8
0.7
0.6
0.5
0.4
10 0
15 0
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
V D S = − 10 V
ID = − 1 m A
50
VDS = −10 V
P u ls e d
10
T A = − 2 5 °C
2 5 °C
7 5 °C
1 2 5 °C
1
0 .1
−0.01
−0.1
T A = 1 2 5 °C
7 5 °C
2 5 °C
− 2 5 °C
40
20
0
−0.01
−0.1
−1
−10
−100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
V G S = − 4 .5 V
P u ls e d
60
140
120
V G S = − 2 .5 V
P u ls e d
T A = 1 2 5 °C
7 5 °C
100
2 5 °C
80
− 2 5 °C
60
40
20
0
−0.01
ID - Drain Current - A
4
−10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
140
80
−1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
−2.5
100
Tch - Channel Temperature - °C
120
−2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
0
−1.5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
-50
−1
−0.1
−1
−10
ID - Drain Current - A
Data Sheet G16203EJ1V0DS
−100
140
T A = 1 2 5 °C
V G S = − 1 .8 V
P u ls e d
120
7 5 °C
2 5 °C
100
− 2 5 °C
80
60
40
20
0
−0.01
−0.1
−1
−10
−100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
140
P u ls e d
120
− 1 .5 A
80
60
40
20
0
−2
0
−6
−8
−10
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10000
140
VGS = 0 V
f = 1 MHz
P u ls e d
V G S = − 1 .8 V
120
100
− 2 .5 V
80
− 4 .5 V
60
40
20
1000
C is s
100
10
-5 0
0
50
100
C oss
C rss
0
150
−0.1
Tch - Channel Temperature - °C
−100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
I D = −5.0 A
VGS - Gate to Source Voltage - V
1000
t d ( o ff)
tf
tr
td (o n )
10
−0.01
−10
−5
V DD = −10 V
V G S = − 4 .0 V
R G = 10 Ω
100
−1
VDS - Drain to Source Voltage - V
10000
1
−4
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
I D = − 2 .5 A
100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
µPA651TT
−0.1
−1
−4
V DD = −16 V
−10 V
−4 V
−3
−2
−1
−10
ID - Drain Current - A
0
0
1
2
3
4
5
6
QG - Gate Charge - nC
Data Sheet G16203EJ1V0DS
5
µPA651TT
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
100
IF - Diode Forward Current - A
P u lse d
10
V GS = 0 V
1
0 .1
0 .0 1
0 .4
0 .6
0 .8
1
1 .2
1 .4
1 .6
VSD - Source to Drain Voltage - V
6
Data Sheet G16203EJ1V0DS
µPA651TT
[MEMO]
Data Sheet G16203EJ1V0DS
7
µPA651TT
• The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4