DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA651TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 69 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) RDS(on)2 = 88 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A) RDS(on)3 = 142 mΩ MAX. (VGS = −1.8 V, ID = −1.5 A) 5 4 1 2 3 1.6 6 0~0.05 0.65 S 0.15 +0.1 −0.05 0.65 2.1±0.1 2.0±0.2 0.25±0.1 The µPA651TT is a switching device, which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. MAX. 0.8 ORDERING INFORMATION 0.05 S PACKAGE µPA651TT 6pinWSOF (1620) 1,2,5,6 : Drain 3 : Gate 4 : Source 0.4±0.1 PART NUMBER Marking: WE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V Drain Current (DC) (TA = 25°C) ID(DC) m5.0 A ID(pulse) m20 A PT1 0.2 W PT2 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TA = 25°C) Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. 0.2 +0.1 −0.05 0.1 M S EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16203EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2002 µPA651TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −10 µA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 µA −1.5 V Gate Cut-off Voltage VDS = −10 V, ID = −1.0 mA VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance −0.45 | yfs | VDS = −10 V, ID = −2.5 A RDS(on)1 VGS = −4.5 V, ID = −2.5 A 55 69 mΩ RDS(on)2 VGS = −2.5 V, ID = −2.5 A 66 88 mΩ RDS(on)3 VGS = −1.8 V, ID = −1.5 A 85 142 mΩ 4.0 S Input Capacitance Ciss VDS = −10 V 600 pF Output Capacitance Coss VGS = 0 V 120 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 75 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −2.5 A 45 ns VGS = −4.0 V 200 ns RG = 10 Ω 435 ns 345 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −16 V 5.5 nC Gate to Source Charge QGS VGS = −4.0 V 1.2 nC Gate to Drain Charge QGD ID = −5.0 A 2.1 nC IF = 5.0 A, VGS = 0 V 0.94 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS (−) RL VGS RG PG. Wave Form 0 VGS 10% PG. VDD 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS (−) VGS (−) 0 IG = −2 mA td(off) tf toff Data Sheet G16203EJ1V0DS µPA651TT TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.6 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C −100 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA R D S (o n ) L im ite d (V G S = − 4 .5 V ) −10 I D (p u lse ) I D (D C ) PW = 1 m s −1 10 m s 1 00 m s −0.1 −0.01 −0.1 5 s S ing le P u ls e M o u nted on F R -4 b o a rd o f 2 5 0 c m × 1.1 m m −1 −10 −100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 25 Single Pulse Mounted on FR-4 board of 2 50 cm × 1.1 mm 100 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16203EJ1V0DS 3 µPA651TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −20 −100 P u ls e d ID - Drain Current - A −12 − 2 .5 V −8 − 1 .8 V −4 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 −1 −0.1 −1.6 T A = 12 5 °C 7 5°C 2 5°C − 2 5°C −0.01 −0.001 −0.0001 0 0 VDS = −10 V P u ls ed −10 V G S = − 4 .5 V −16 ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS −0.5 0 VDS - Drain to Source Voltage - V 0.9 0.8 0.7 0.6 0.5 0.4 10 0 15 0 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V V D S = − 10 V ID = − 1 m A 50 VDS = −10 V P u ls e d 10 T A = − 2 5 °C 2 5 °C 7 5 °C 1 2 5 °C 1 0 .1 −0.01 −0.1 T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C 40 20 0 −0.01 −0.1 −1 −10 −100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ V G S = − 4 .5 V P u ls e d 60 140 120 V G S = − 2 .5 V P u ls e d T A = 1 2 5 °C 7 5 °C 100 2 5 °C 80 − 2 5 °C 60 40 20 0 −0.01 ID - Drain Current - A 4 −10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 140 80 −1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 −2.5 100 Tch - Channel Temperature - °C 120 −2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1 0 −1.5 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 −1 −0.1 −1 −10 ID - Drain Current - A Data Sheet G16203EJ1V0DS −100 140 T A = 1 2 5 °C V G S = − 1 .8 V P u ls e d 120 7 5 °C 2 5 °C 100 − 2 5 °C 80 60 40 20 0 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 P u ls e d 120 − 1 .5 A 80 60 40 20 0 −2 0 −6 −8 −10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 140 VGS = 0 V f = 1 MHz P u ls e d V G S = − 1 .8 V 120 100 − 2 .5 V 80 − 4 .5 V 60 40 20 1000 C is s 100 10 -5 0 0 50 100 C oss C rss 0 150 −0.1 Tch - Channel Temperature - °C −100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS I D = −5.0 A VGS - Gate to Source Voltage - V 1000 t d ( o ff) tf tr td (o n ) 10 −0.01 −10 −5 V DD = −10 V V G S = − 4 .0 V R G = 10 Ω 100 −1 VDS - Drain to Source Voltage - V 10000 1 −4 VGS - Gate to Source Voltage - V SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns I D = − 2 .5 A 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µPA651TT −0.1 −1 −4 V DD = −16 V −10 V −4 V −3 −2 −1 −10 ID - Drain Current - A 0 0 1 2 3 4 5 6 QG - Gate Charge - nC Data Sheet G16203EJ1V0DS 5 µPA651TT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 IF - Diode Forward Current - A P u lse d 10 V GS = 0 V 1 0 .1 0 .0 1 0 .4 0 .6 0 .8 1 1 .2 1 .4 1 .6 VSD - Source to Drain Voltage - V 6 Data Sheet G16203EJ1V0DS µPA651TT [MEMO] Data Sheet G16203EJ1V0DS 7 µPA651TT • The information in this document is current as of May, 2002. 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