DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA653TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) FEATURES 4.0 V drive available Low on-state resistance RDS(on)1 = 165 mΩ MAX. (VGS = −10 V, ID = −1.5 A) RDS(on)2 = 267 mΩ MAX. (VGS = −4.5 V, ID = −1.5 A) RDS(on)3 = 304 mΩ MAX. (VGS = −4.0 V, ID = −1.5 A) 4 1 2 3 1.6 5 0.65 0~0.05 0.65 S 0.15 +0.1 −0.05 • • 6 2.1±0.1 2.0±0.2 0.25±0.1 The µPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. MAX. 0.8 ORDERING INFORMATION 0.05 S PACKAGE µPA653TT 6pinWSOF (1620) 1,2,5,6 : Drain 3 : Gate 4 : Source 0.4±0.1 PART NUMBER Marking: WG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) ID(DC) m2.5 A ID(pulse) m10 A PT1 0.2 W PT2 1.3 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. 2 0.2 +0.1 −0.05 0.1 M S EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16205EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan © 2002 µPA653TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −10 µA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 µA −2.5 V Gate Cut-off Voltage VDS = −10 V, ID = −1.0 mA VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance −1.5 −1.8 1.0 2.9 | yfs | VDS = −10 V, ID = −1.5 A RDS(on)1 VGS = −10 V, ID = −1.5 A 132 165 mΩ RDS(on)2 VGS = −4.5 V, ID = −1.5 A 200 267 mΩ RDS(on)3 VGS = −4.0 V, ID = −1.5 A 228 304 mΩ S Input Capacitance Ciss VDS = −10 V 175 pF Output Capacitance Coss VGS = 0 V 56 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 25 pF Turn-on Delay Time td(on) VDD = −15 V, ID = −1.5 A 12 ns VGS = −10 V 40 ns RG = 10 Ω 128 ns 82 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −24 V 3.4 nC Gate to Source Charge QGS VGS = −10 V 0.6 nC Gate to Drain Charge QGD ID = −2.5 A 1.0 nC IF = 2.5 A, VGS = 0 V 0.90 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS (−) RL VGS RG PG. Wave Form 0 VGS 10% PG. VDD 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS (−) VGS (−) 0 IG = −2 mA td(off) tf toff Data Sheet G16205EJ1V0DS µPA653TT TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 1.6 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 Mounted on FR-4 board of 2 5000 mm x 1.1 mm, t ≤ 5 sec. 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA I D (p u lse ) - 10 I D (D C ) PW = 1 m s -1 R D S (o n ) Lim ited (V G S = – 10 V ) 10 m s 10 0 m s - 0 .1 S ingle P ulse M o unted o n F R -4 b oard o f 2 50 00 m m x 1 .1 m m - 0 .01 - 0 .1 -1 5 s - 10 - 1 00 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A - 1 00 1000 Single Pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 100 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16205EJ1V0DS 3 µPA653TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -5 - 100 V DS = –1 0 V P u ls e d V GS = –10 V -4 ID - Drain Current – A ID - Drain Current - A Pulsed -3 –4.5 V -2 –4.0 V -1 - 10 - 1 T A = 1 2 5 °C 7 5°C 2 5°C – 2 5 °C - 0 .1 - 0 .0 1 - 0 .0 0 1 - 0 .0 0 0 1 0 0 - 0.2 - 0.4 - 0.6 0 - 0.8 - 1 VDS - Drain to Source Voltage - V VGS(off) - Gate Cut-off Voltage - V V DS = –10 V ID = –1.0 m A -2 - 1.8 - 1.6 - 1.4 - 1.2 -50 0 50 100 150 100 V GS = –4.0 V 300 –4.5 V 200 –10 V 0 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 400 -50 - 6 T A = –25°C 25°C 75°C 125°C 10 1 0.1 0.01 - 0.01 - 0.1 -1 - 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 400 ID = –1.5 A Pulsed 300 200 100 0 Tch - Channel Temperature - °C 4 - 5 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 - 4 V D S = –10 V Pulsed Tch - Channel Temperature - °C ID = –1.5 A Pulsed - 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 2.2 - 2 VGS - Gate to Source Voltage - V 0 -5 - 10 - 15 VGS - Gate to Source Voltage - V Data Sheet G16205EJ1V0DS - 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 V GS = –10 V Pulsed 300 T A = 125°C 75°C 200 100 25°C –25°C 0 - 0.01 - 0.1 -1 - 10 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µPA653TT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 V G S = –4.5 V P uls ed TA = 125°C 300 75°C 200 25°C 100 –25°C 0 - 0.01 - 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1000 V GS = –4.0 V P uls ed TA = 125°C 75°C 25°C 200 –25°C 100 V D D = –15 V V G S = –10 V R G = 10 Ω t d(off) 100 tf tr t d(on) 0 - 0.01 - 0.1 -1 10 - 0.1 - 10 -1 ID - Drain Current - A - 10 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 V GS = 0 V f = 1.0 M Hz IF - Diode Forward Current - A Ciss, Coss, Crss - Capacitance - pF - 10 SWITCHING CHARACTERISTICS 400 300 -1 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A C is s 100 C os s V GS = 0 V P uls ed 10 1 0.1 C rs s 10 - 0.1 -1 - 10 - 100 0.01 0.4 VDS - Drain to Source Voltage - V 0.6 0.8 1.0 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet G16205EJ1V0DS 5 µPA653TT DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V - 10 I D = –2.5 A V DD = –6.0 V –15 V –24 V -8 -6 -4 -2 0 0 1 2 3 4 QG - Gate Change - nC 6 Data Sheet G16205EJ1V0DS µPA653TT [MEMO] Data Sheet G16205EJ1V0DS 7 µPA653TT • The information in this document is current as of September, 2002. 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