DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ621 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0.4 +0.1 –0.05 • 1.8 V drive available • Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A) RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A) RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) +0.1 0.65–0.15 3 1.5 2.8 ±0.2 FEATURES 0.16+0.1 –0.06 0 to 0.1 1 2 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER PACKAGE 2SJ621 SC-96 (Mini Mold Thin Type) Marking: XG ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –12 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V Drain Current (DC) (TA = 25°C) ID(DC) m3.5 A ID(pulse) m12 0.2 A Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) PT1 Note2 Drain Body Diode W PT2 1.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Total Power Dissipation (TA = 25°C) EQUIVALENT CIRCUIT Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15634EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2001 2SJ621 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –12 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 µA 1.5 V Gate Cut-off Voltage VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance VDS = –10 V, ID = –1.0 mA 0.45 | yfs | VDS = –10 V, ID = –3.5 A 4.0 RDS(on)1 VGS = –4.5 V, ID = –2.0 A 35 44 mΩ RDS(on)2 VGS = –3.0 V, ID = –2.0 A 42 56 mΩ RDS(on)3 VGS = –2.5 V, ID = –2.0 A 46 62 mΩ RDS(on)4 VGS = –1.8 V, ID = –1.5 A 63 105 mΩ S Input Capacitance Ciss VDS = –10 V 630 pF Output Capacitance Coss VGS = 0 V 170 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 100 pF Turn-on Delay Time td(on) VDD = –6.0 V, ID = –2.0 A 20 ns VGS = –4.0 V 70 ns RG = 10 Ω 320 ns 200 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –10 V 6.2 nC Gate to Source Charge QGS VGS = –4.0 V 1.0 nC Gate to Drain Charge QGD ID = –3.5 A 2.0 nC IF = 3.5 A, VGS = 0 V 0.84 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE VGS(−) D.U.T. VGS RL RG PG. Wave Form 0 VGS 10% VDS(−) VDD PG. 90% 90% VDS VDS VGS (−) 0 Wave Form 10% 0 td(on) τ tr ton 10% td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 D.U.T. 90% Data Sheet D15634EJ1V0DS IG = −2 mA RL 50 Ω VDD 2SJ621 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1. 5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 1. 25 1 0. 75 0. 5 0. 25 0 0 0 20 40 60 80 100 120 140 0 160 TA - Ambient Temperature - °C 20 40 60 80 10 0 12 0 14 0 16 0 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA −100 R D S (o n) L im ite d (V G S = − 4 .5 V ) −10 PW = 1 m s I D (D C ) 10 m s −1 1 00 m s 5 s −0.1 S ing le P u ls e M o un te d o n F R -4 b o ard o f 5 0 x 50 x 1.6 m m −0.01 −0.1 −1 −10 −100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A I D (p u ls e) Single Pulse Without board 100 Mounted on FR-4 board of 50 × 50 × 1.6 mm 10 1 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15634EJ1V0DS 3 2SJ621 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −12 −100 VDS = −10 V P u ls e d P u ls e d −4.5 V −10 −2.5 V ID - Drain Current - A −10 ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS −3.0 V −8 −6 −1.8 V −4 −2 0 0 −0.2 −0.4 −0.6 −1 −0.1 T A = − 2 5°C 2 5°C 7 5°C 1 25 °C −0.01 −0.001 −0.0001 0 −0.8 −0.4 VDS - Drain to Source Voltage - V 50 100 150 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V −0.2 V DS = −10 V P u ls e d T A = − 2 5 °C 2 5 °C 7 5 °C 1 2 5 °C 10 1 0 .1 −0.01 −0.1 Tch - Channel Temperature - °C P uls ed V G S = − 1.8 V 80 − 2.5 V 60 − 3.0 V − 4.5 V 20 0 0 50 100 Tch - Channel Temperature - °C −10 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 4 100 40 −1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE -50 −2 100 −0.7 0 −1.6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V S D = −10 V I D = −1 m A -50 −1.2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE −1.2 −0.8 100 P u ls e d 80 60 I D = − 2 .0 A 40 20 0 0 −2 −4 −6 VGS - Gate to Source Voltage - V Data Sheet D15634EJ1V0DS −8 2SJ621 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 V G S = − 1 .8 V P u ls e d 100 T A = 125°C 80 7 5 °C 2 5 °C 60 − 25°C 40 −0.01 −0.1 −1 −10 −100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 V G S = − 2 .5 V P u ls e d 70 T A = 1 2 5 °C 60 7 5 °C 50 2 5 °C 40 − 2 5 °C 30 20 −0.01 ID - Drain Current - A T A = 1 2 5 °C 7 5 °C 2 5 °C 40 − 2 5 °C 30 20 −0.01 −0.1 −1 −10 −100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ V G S = − 3 .0 V P u ls e d 50 60 50 T A = 1 2 5 °C 7 5 °C 40 2 5 °C − 2 5 °C 30 20 −0.01 −10 1000 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz Ciss, Coss, Crss - Capacitance - pF −1 1000 C is s C oss C rs s −1 −100 SWITCHING CHARACTERISTICS 10000 −0.1 −0.1 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 −100 V G S = − 4 .5 V P u ls e d ID - Drain Current - A 10 −10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 60 −1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 −0.1 −10 V D D = − 6 .0 V V G S = − 4 .0 V RG = 10 Ω t d (o ff) tf 100 −100 VDS - Drain to Source Voltage - V Data Sheet D15634EJ1V0DS tr t d (o n ) 10 −0.1 −1 −10 ID - Drain Current - A 5 2SJ621 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT/OUTPUT CHARACTERISTICS −5 100 VGS - Gate to Source Voltage - V ISD - Diode Forward Current - A P u ls e d 10 V GS = 0 V 1 0 .1 0 .0 1 −4 V DD = −10 V −6.0 V −3 −2 −1 0 0 .4 0 .6 0 .8 1 1 .2 VSD - Source to Drain Voltage - V 6 I D = −3.5 A 0 1 2 3 4 5 QG - Gate Charge - nC Data Sheet D15634EJ1V0DS 6 7 2SJ621 [MEMO] Data Sheet D15634EJ1V0DS 7 2SJ621 • The information in this document is current as of May, 2002. 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