DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ624 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) +0.1 0.65–0.15 0.16 +0.1 –0.06 3 1.5 FEATURES 0.4 +0.1 –0.05 2.8 ±0.2 The 2SJ624 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 0 to 0.1 1 • 1.8 V drive available • Low on-state resistance RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 71 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) RDS(on)3 = 108 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) 2 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER PACKAGE 2SJ624 SC-96 (Mini Mold Thin Type) Marking: XH ABSOLUTE MAXIMUM RATINGS (TA = 25°C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = 0 V) VDSS –20 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V Drain Current (DC) (TA = 25°C) ID(DC) m4.5 A ID(pulse) m18 A PT1 0.2 W PT2 1.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15890EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 2002 2SJ624 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –20 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 µA –1.5 V Gate Cut-off Voltage VGS(off) Forward Transfer Admittance Drain to Source On-state Resistance VDS = –10 V, ID = –1.0 mA –0.45 –0.75 5.0 9.5 | yfs | VDS = –10 V, ID = –2.5 A S RDS(on)1 VGS = –4.5 V, ID = –2.5 A 43 54 mΩ RDS(on)2 VGS = –2.5 V, ID = –2.5 A 53 71 mΩ RDS(on)3 VGS = –1.8 V, ID = –1.5 A 65 108 mΩ Input Capacitance Ciss VDS = –10 V 813 pF Output Capacitance Coss VGS = 0 V 165 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 69 pF Turn-on Delay Time td(on) VDD = –10 V, ID = –2.5 A 14 ns VGS = –4.0 V 42 ns RG = 10 Ω 80 ns 92 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = –16 V 8.1 nC Gate to Source Charge QGS VGS = –4.0 V 1.3 nC Gate to Drain Charge QGD ID = –4.5 A 2.8 nC IF = 4.5 A, VGS = 0 V 0.90 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE VGS (−) D.U.T. VGS RL RG PG. Wave Form 0 VGS 10% VDS (−) VDD PG. 90% 90% VDS VDS VGS (−) 0 Wave Form 10% 0 td(on) τ tr ton 10% td(off) tf toff τ = 1 µs Duty Cycle ≤ 1% 2 D.U.T. 90% Data Sheet D15890EJ1V0DS IG = −2 mA RL 50 Ω VDD 2SJ624 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 1.25 1 0.75 0.5 0.25 0 Mounted on FR-4 board of 2 50 cm x 1.1 mm 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 PW = 1 ms -10 ID(DC) -1 10 ms 100 ms -0.1 Single Pulse Mounted on FR-4 board of 2 50 cm x 1.1 mm -0.01 -0.1 -1 5s -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A R DS(on) Limited (VGS = −4.5 V) ID(pulse) Single Pulse Without board 100 Mounted on FR-4 board of 50 cm2 x 1.1 mm 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15890EJ1V0DS 3 2SJ624 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -20 -100 V DS = −10 V Pulsed -10 -16 VGS = −4.5 V ID - Drain Current - A ID - Drain Current - A Pulsed −2.5 V -12 -8 −1.8 V -4 -1 T A = 125°C 75°C 25°C −25°C -0.1 -0.01 -0.001 -0.0001 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1.4 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = −10 V ID = −1.0 mA -0.8 -0.6 -0.4 -0.2 50 100 1 -0.1 60 VGS = −2.5 V, ID = −2.5 A VGS = −4.5 V, ID = −2.5 A 20 100 100 Pulsed 80 60 ID = −2.5 A 40 20 150 Tch - Channel Temperature - °C 4 -10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS = −1.8 V, ID = −1.5 A 50 -1 ID - Drain Current - A Pulsed 0 -2.4 T A = −25°C 25°C 75°C 125°C 10 0.1 -0.01 150 100 -50 -2 VDS = −10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 -1.6 100 Tch - Channel Temperature - °C 80 -1.2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -1 0 -0.8 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 -0.4 0 -2 -4 -6 VGS - Gate to Source Voltage - V Data Sheet D15890EJ1V0DS -8 100 VGS = −4.5 V Pulsed 80 TA = 125°C 60 75°C 25°C 40 −25°C 20 0 -0.01 -0.1 -1 -10 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT -100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 VGS = −2.5 V Pulsed 75°C 80 25°C 60 −25°C 40 20 -0.01 -0.1 -1 -10 -100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS 120 1000 VGS = −1.8 V Pulsed 75°C 100 25°C TA = 125°C 80 60 40 -0.01 −25°C -0.1 -1 -10 td(off) tf tr td(on) 10 1 -0.1 -100 -1 -10 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10000 1000 C iss C oss 100 C rss Pulsed IF - Diode Forward Current - A V GS = 0 V f = 1.0 MHz 10 -0.1 VDD = −10 V VGS = −4.0 V R G = 10 Ω 100 ID - Drain Current - A Ciss, Coss, Crss - Capacitance - pF TA = 125°C 100 ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 2SJ624 10 VGS = 0 V 1 0.1 0.01 -1 -10 -100 VDS - Drain to Source Voltage - V 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V Data Sheet D15890EJ1V0DS 5 2SJ624 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V -6 ID = −4.5 A -5 VDD = −16 V −10 V −4 V -4 -3 -2 -1 0 0 2 4 6 8 10 QG - Gate Charge - nC 6 Data Sheet D15890EJ1V0DS 2SJ624 [MEMO] Data Sheet D15890EJ1V0DS 7 2SJ624 • The information in this document is current as of June, 2002. 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