DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3354 TO-220AB 2SK3354-S TO-262 2SK3354-Z TO-220SMD designed for high current switching applications. FEATURES • Super low on-state resistance: ★ RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 42 A) ★ RDS(on)2 = 12 mΩ MAX. (VGS = 4 V, ID = 42 A) ★ • Low Ciss: Ciss = 6300 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V ID(DC) ±83 A ID(pulse) ±332 A PT 100 W Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 55 A Single Avalanche Energy Note2 EAS 302 mJ Storage Temperature ★ ★ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % ★ 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.25 °C/W Channel to Ambient Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14131EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999 2SK3354 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 42 A 6.3 8.0 mΩ RDS(on)2 VGS = 4 V, ID = 42 A 8.0 12 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 42 A 35 59 Drain Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz Output Capacitance Gate to Source Cut-off Voltage S 6300 pF Coss 1000 pF Reverse Transfer Capacitance Crss 490 pF Turn-on Delay Time td(on) ID = 42 A, VGS(on) = 10 V, VDD = 30 V, 100 ns RG = 10 Ω 1500 ns td(off) 300 ns tf 440 ns 106 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 20 nC Gate to Drain Charge QGD 30 nC Body Diode Forward Voltage ID = 83 A , VDD = 48 V, VGS = 10 V VF(S-D) IF = 83 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 83 A, VGS = 0 V, 55 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 100 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL RG RG = 10 Ω PG. VDD VGS Wave Form 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % IAS ID VGS 0 BVDSS ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet D14131EJ1V0DS00 td(on) tr ton td(off) tf toff 2SK3354 PACKAGE DRAWING (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 4.8 MAX. φ 3.6±0.2 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 0.75±0.3 2.54 TYP. 2 3 8.5±0.2 1 1 2 3 1.3±0.2 4.8 MAX. 4 15.5 MAX. 5.9 MIN. (10) 4 0.75±0.1 2.54 TYP. 1.0±0.5 1.3±0.2 10.0 12.7 MIN. 3.0±0.3 10.6 MAX. 0.5±0.2 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3) TO-220SMD (MP-25Z) EQUIVALENT CIRCUIT 4.8 MAX. (10) 1.3±0.2 Drain 1.4±0.2 1.0±0.3 2 Remark Body Diode Gate ) .5R 8R) . 0 ( (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 2.54 TYP. 1 3.0±0.5 11±0.4 8.5±0.2 1.0±0.5 4 Gate Protection Diode Source 1.Gate 2.Drain 3.Source 4.Fin (Drain) The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14131EJ1V0DS00 3 2SK3354 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. 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Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8