DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Symbol Ratings Unit Collector to base voltage Parameter VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (DC) IC(DC) 100 mA Collector current (Pulse) IC(pulse) * 200 mA Total power dissipation PT 250 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Electrode Connection 1. Emitte 2. Collector 3. Base * PW ≤ 10 ms, duty cycle ≤ 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Collector cutoff current ICBO DC current gain hFE2 ** Collector saturation voltage MIN. TYP. MAX. Unit VCE = 5.0 V, IC = 5.0 mA 135 340 100 nA 600 − VCE = 5.0 V, IC = 50 mA 100 0.2 V 0.55 0.5 V 10 13.0 kΩ 0.2 µs VCB = 50 V, IE = 0 hFE1 ** DC current gain Conditions VCE(sat) ** IC = 5.0 mA, IB = 0.25 mA High level input voltage VIL ** VCE = 0.2 V, IC = 5.0 mA Low level input voltage VIH ** VCE = 5.0 V, IC = 100 µA 2.0 0.7 − 300 0.04 0.8 V Input resistance R1 Turn-on time ton VCC = 5.0 V, RL = 1.0 kΩ Storage time tstg VI = 5.0 V, PW = 2.0 µs 5.0 µs Turn-off time toff duty cycle≤2 % 6.0 µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 % hFE CLASSIFICATION Marking Q P K hFE1 135 to 270 200 to 400 300 to 600 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10841EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 BA1A4Z TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 Data Sheet DC10841EJ2V0DS BA1A4Z [MEMO] Data Sheet DC10841EJ2V0DS 3 BA1A4Z • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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