DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Collector to base voltage Symbol VCBO Ratings 2SB1116 2SB1116A −60 −80 −50 Unit V −60 Collector to emitter voltage VCEO Emitter to base voltage VEBO −6.0 Collector current (DC) IC(DC) −1.0 A Collector current (pulse) IC(pulse)* −2.0 A Total power dissipation PT 0.75 Junction temperature Tj W °C Storage temperature Tstg 150 −55 to +150 V V °C * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions 2SB1116, 1116A MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = −60 V, IE = 0 −100 nA Emitter cutoff current IEBO VEB = −6.0 V, IC = 0 −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −100 mA 135 DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 81 −600 −650 −700 Collector saturation voltage VCE(sat) ** IC = −1.0 A, IB = −50 mA −0.20 −0.3 V Base saturation voltage VBE(sat) ** IC = −1.0 A, IB = −50 mA −0.9 −1.2 V DC base voltage VBE ** Output capacitance Cob VCE = −2.0 V, IC = −50 mA 600/400 VCB = −10 V, IE = 0, f = 1.0 MHz fT VCE = −2.0 V, IC = −100 mA Turn-on time ton Storage temperature tstg VCC = −10 V, IC = −100 mA IB1 = −IB2 = −10 mA, VBE(off) = 2 to 3 V Gain bandwidth product Fall time tf 70 mV 25 pF 120 0.07 MHz µs 0.70 µs 0.07 µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16195EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SB1116, 1116A hFE CLASSIFICATION (The U rank is not available for the 2SB1116A.) 2 Marking L K U hFE1 135 to 270 200 to 400 300 to 600 Data Sheet D16195EJ1V0DS 2SB1116, 1116A TYPICAL CHARACTERISTICS (Ta = 25°°C) Data Sheet D16195EJ1V0DS 3 2SB1116, 1116A 4 Data Sheet D16195EJ1V0DS 2SB1116, 1116A [MEMO] Data Sheet D16195EJ1V0DS 5 2SB1116, 1116A • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4