DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. PACKAGE DRAWING (UNIT: mm) FEATURES • On-chip zener diode for surge voltage absorption • On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ • Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A • On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage VCEO 60±10 V Emitter to base voltage VEBO 15 V Collector current (DC) IC(DC) ±2.0 A Collector current (Pulse) Base current (DC) IC(pulse) * ±3.0 A IB(DC) 0.03 A Total power dissipation PT 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Colletor to emitter voltage Collector cutoff current Symbol VCEO(SUS) ICBO Conditions IC = 2.0 A, IB = 5.0 Ma, L = 6.0 mH MIN. TYP. 50 60 VCB = 40 V, IE = 0 MAX. Unit V 100 nA − DC current gain hFE1 ** VCE = 5.0 V, IC = 0.2 A 700 1200 DC current gain hFE2 ** VCE = 5.0 V, IC = 1.0 A 1000 1700 DC current gain hFE3 ** VCE = 5.0 V, IC = 2.0 A 500 1300 Low level output voltage VOL ** VI = 5.0 V, IC = 0.5 A 0.12 0.3 V Low level input voltage VIL ** VCE = 12 V, IC = 100 µA 0.46 0.4 V − 3000 − Input resistance 1 R1 0.7 1.0 1.3 kΩ Input resistance 2 R2 7.0 10.0 13.0 kΩ Turn-on time ton IC = 1.0 A 0.4 µs Storage time tstg IBI = −IB2 = 10 mA 1.4 µs VCC = 20 V, RL = 20 Ω 0.5 µs Fall time tf ** Pulse test PW≤350 µs, duty cycle≤2 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16177EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 CE1A3Q TYPICAL CHARACTERISTICS (Ta = 25°°C) 2 Data Sheet D16177EJ1V0DS CE1A3Q Data Sheet D16177EJ1V0DS 3 CE1A3Q • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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